Investigation of gate material engineering in junctionless transistor for digital and analog applications
In this paper, we propose dual material gate with dual-k dielectric gate oxide double gate
junctionless transistor 'DMG-DK-JLT'for significant enhancement of performance. We …
junctionless transistor 'DMG-DK-JLT'for significant enhancement of performance. We …
Reducing off-state leakage current in dopingless transistor employing dual metal drain
S Zafar, MA Raushan, S Ahmad… - … Science and Technology, 2019 - iopscience.iop.org
In this paper a new configuration for dopingless transistor is presented for preventing the off-
state tunneling from channel to drain. In this work, workfunction engineering has been …
state tunneling from channel to drain. In this work, workfunction engineering has been …
Design of Radiation Hardened SRAM Cell using Dopingless Transistor for Space Applications
P Dwivedi, M Panchore, P Raikwal - Journal of Electrical Engineering & …, 2024 - Springer
The device utilized in space application demands reliable and stable static-random-access-
memory (SRAM) circuits for uninterrupted and secure operation. In this paper, we have …
memory (SRAM) circuits for uninterrupted and secure operation. In this paper, we have …
Dual P+-Wire Double-Gate Junctionless MOSFET with 10-nm Regime for Low Power Applications
The present study simulated and investigated a 3D double-gate junctionless transistor with a
gate length of 10 nm and using dual P+-wire (DPW) on the leftmost and rightmost ends of …
gate length of 10 nm and using dual P+-wire (DPW) on the leftmost and rightmost ends of …
Impact of Pocket in a Doping-Less Tunnel Field Effect Transistor
MA Raushan, M Mustaqeem, S Ahmad… - Proceedings of 6th …, 2021 - Springer
In this paper, we have proposed the use of n-type pocket in a doping-less tunnel field effect
transistor to improve the performance of the device. We have proposed a smart strategy to …
transistor to improve the performance of the device. We have proposed a smart strategy to …
Physical Insight into electrostatically doped TFET considering Ambipolarity conduction
N Haneef, MY Bashir, MA Raushan… - 2022 5th International …, 2022 - ieeexplore.ieee.org
To substitute physical doping or acceptor dopant species with free electron or hole charges
generated by electrodes, electrostatic doping is one of the emerging strategies in device …
generated by electrodes, electrostatic doping is one of the emerging strategies in device …
Introduction of Metal Layer in Junctionless Accumulation Mode FET:-Proposal and Analysis
In this paper, we have proposed single gate junctionless accumulation mode FET (JAM) and
underlapped junctionless accumulation mode FET (UL-JAM) with metal layer implant in gate …
underlapped junctionless accumulation mode FET (UL-JAM) with metal layer implant in gate …
Junctionless Field Effect Transistor: A Technical Review
M Shadan, H Goel, AS Rana, MM Singh… - … Systems and Smart …, 2023 - taylorfrancis.com
In this article, we have studied the different junctionless field effect transistors (JL-FETs). A
list of papers has been studied and concluded on the basis of their working and …
list of papers has been studied and concluded on the basis of their working and …
Emerging Nanoelectronic Devices
The most striking feature of the semiconductor industry is the scaling of MOSFETs, due to
which it is getting cheaper and also consuming less power. But as the MOS transistors are …
which it is getting cheaper and also consuming less power. But as the MOS transistors are …
and Mohd Jawaid Siddiqui
MA Raushan, N Alam - Nanoelectronic Devices for Hardware …, 2021 - books.google.com
The era of electronic gadgets has set upon us, giving rise to many smart devices. These
smart devices have vastly improved the standard of living of mankind. The ease of life is …
smart devices have vastly improved the standard of living of mankind. The ease of life is …