We investigate growth conditions for strain-compensated In 0.67 Ga 0.33 As/In 0.36 Al 0.64
As/InP quantum cascade lasers (QCLs) by solid-source molecular beam epitaxy (SSMBE) …

We demonstrate a three-section, electrically pulsed quantum cascade laser which consists
of a Fabry-Pérot section placed between two sampled grating distributed Bragg reflectors …

The quality of epitaxial layers in quantum cascade lasers (QCLs) has a primary impact on
QCL performance, and establishing correlations between epitaxial growth and materials …

Photoluminescence (PL) is investigated as a function of the excitation intensity and
temperature for lattice-matched InGaAs/InAlAs quantum well (QW) structures with well …

Sharing the advantages of high optical power, high efficiency and design flexibility in a
compact size, quantum cascade lasers (QCLs) are excellent mid-to-far infrared laser …

This study investigated the molecular beam epitaxy (MBE) growth conditions of strain-
balanced (SB) In 0.669 GaAs/In 0.362 AlAs superlattices (SLs) for SB quantum cascade …

The measured emission wavelengths of AlInAs/GaInAs/InP quantum cascade lasers (QCLs)
grown by metal organic vapor phase epitaxy (MOVPE) have been reported to be~ 0.5–1 µm …

We propose a new class of gratings having multiple spatial frequencies. Their design relies
on the use of small aperiodic grating sequences as unit cells whose repetition forms a …

We present a systematic study of the morphology of homoepitaxial InP films grown by
metalorganic vapor-phase epitaxy which are imaged with ex situ atomic force microscopy …

AlInAs/GaInAs superlattices (SLs) with barrier and well layers of various thicknesses were
grown by organometallic vapor phase epitaxy to optimize growth of quantum cascade lasers …