We review the recent developments in GaAs-based 1.55-mum lasers grown by molecular
beam epitaxy (MBE). While materials growth is challenging, the growth window appears to …

A brief review on the present knowledge of the electronic properties of the Ga (In) NAs
ternary and quaternary alloys is given mainly from an experimental perspective. The …

The thermal annealing effect on the photoluminescence (PL) characteristics of
GaInNAs/GaAs quantum wells (QWs) grown by chemical beam epitaxy (CBE) using radical …

Rapid progress has been made in the growth of GaInNAs-GaAs by solid source molecular
beam epitaxy, leading to significant improvements of such heterostructures for 1.3-μm …

Use of GaInNAs in the base of heterojunction bipolar transistors (HBTs) on GaAs substrates
allows a reduction of the turn-on voltage, V be, on, of the devices, facilitating their use in …

We have investigated growth of GaInNAs by MOCVD using dimethylhydrazine (DMHy) and
by CBE using RF-radical nitrogen. It was found that there was a large difference in nitrogen …

GaInNAs/GaAs quantum dot (QD) structure is expected to be one of the novel materials to
extend the emission wavelength of GaAs-based lasers. In this work, we have grown …

High-temperature pulsed operation of GaInNAs-GaAs double-quantum-well lasers grown by
chemical beam epitaxy has been demonstrated for the first time. The lasing wavelength was …

Optical quality of GaNAs and GaInNAs quantum wells and its dependence on RF radical cell
operation in chemical beam epitaxy (CBE) were investigated. It was shown that nitrogen …

We present a characterisation of a GaInNAs/GaNAs quantum well-based photodetector with
a bottom distributed Bragg reflector (quasi-cavity). The detector is designed to be used at the …