Dilute ferromagnetic semiconductors: Physics and spintronic structures

T Dietl, H Ohno - Reviews of Modern Physics, 2014 - APS
This review compiles results of experimental and theoretical studies on thin films and
quantum structures of semiconductors with randomly distributed Mn ions, which exhibit …

Spinodal nanodecomposition in semiconductors doped with transition metals

T Dietl, K Sato, T Fukushima, A Bonanni, M Jamet… - Reviews of Modern …, 2015 - APS
This review presents the recent progress in computational materials design, experimental
realization, and control methods of spinodal nanodecomposition under three-and two …

Families of magnetic semiconductors—an overview

T Dietl, A Bonanni, H Ohno - Journal of Semiconductors, 2019 - iopscience.iop.org
The interplay of magnetic and semiconducting properties has been in the focus for more
than a half of the century. In this introductory article we briefly review the key properties and …

Mechanical, thermodynamic and electronic properties of wurtzite and zinc-blende GaN crystals

H Qin, X Luan, C Feng, D Yang, G Zhang - Materials, 2017 - mdpi.com
For the limitation of experimental methods in crystal characterization, in this study, the
mechanical, thermodynamic and electronic properties of wurtzite and zinc-blende GaN …

Experimentally evaluating the origin of dilute magnetism in nanomaterials

LMC Pereira - Journal of Physics D: Applied Physics, 2017 - iopscience.iop.org
Reports of room-temperature ferromagnetism continue to emerge for an ever-growing range
of nanomaterials with a small or even vanishing concentration of magnetic atoms. Dilute …

Stretching magnetism with an electric field in a nitride semiconductor

D Sztenkiel, M Foltyn, GP Mazur, R Adhikari… - Nature …, 2016 - nature.com
The significant inversion symmetry breaking specific to wurtzite semiconductors, and the
associated spontaneous electrical polarization, lead to outstanding features such as high …

Systematic quantum cluster typical medium method for the study of localization in strongly disordered electronic systems

H Terletska, Y Zhang, KM Tam, T Berlijn, L Chioncel… - Applied Sciences, 2018 - mdpi.com
Great progress has been made in recent years towards understanding the properties of
disordered electronic systems. In part, this is made possible by recent advances in quantum …

In situ compensation method for high-precision and high-sensitivity integral magnetometry

K Gas, M Sawicki - Measurement Science and Technology, 2019 - iopscience.iop.org
The ongoing process of the miniaturization of spintronics and magnetic-films-based devices,
as well as a growing necessity for basic material research place stringent requirements on …

Tuning of ferromagnetic behavior of GaN films by N ion implantation: An experimental and first principle-based study

P Singh, S Ghosh, V Mishra, S Barman… - Journal of Magnetism …, 2021 - Elsevier
Magnetic properties of N-ion implanted GaN films (150 nm) have been reported. It is found
that GaN films grown by the MOCVD technique show strong room temperature …

Fermi level and bands offsets determination in insulating (Ga, Mn) N/GaN structures

L Janicki, G Kunert, M Sawicki, E Piskorska-Hommel… - Scientific Reports, 2017 - nature.com
The Fermi level position in (Ga, Mn) N has been determined from the period-analysis of GaN-
related Franz-Keldysh oscillation obtained by contactless electroreflectance in a series of …