[HTML][HTML] Research and analysis of MEMS switches in different frequency bands

W Tian, P Li, LX Yuan - Micromachines, 2018 - mdpi.com
Due to their high isolation, low insertion loss, high linearity, and low power consumption,
microelectromechanical systems (MEMS) switches have drawn much attention from …

[HTML][HTML] Analytical approach in the development of RF MEMS switches

IE Lysenko, AV Tkachenko, EV Sherova, AV Nikitin - Electronics, 2018 - mdpi.com
Currently, the technology of microelectromechanical systems is widely used in the
development of high-frequency and ultrahigh-frequency devices. The most important …

Fabrication and characterization of capacitive RF MEMS perforated switch

KS Rao, LN Thalluri, K Guha, KG Sravani - IEEE Access, 2018 - ieeexplore.ieee.org
In this paper, we have designed, simulated, fabricated, and characterized a clamped-
clamped micro mechanical structure-based shunt capacitive RF MEMS switch. The clamped …

On the influence of environment gases, relative humidity and gas purification on dielectric charging/discharging processes in electrostatically driven MEMS/NEMS …

U Zaghloul, B Bhushan, P Pons… - …, 2010 - iopscience.iop.org
In this paper, we investigate the impact of environment gases and relative humidity on
dielectric charging phenomenon in electrostatically actuated micro-and nano …

A systematic reliability investigation of the dielectric charging process in electrostatically actuated MEMS based on Kelvin probe force microscopy

U Zaghloul, GJ Papaioannou, F Coccetti… - Journal of …, 2010 - iopscience.iop.org
This paper presents a comprehensive investigation for the dielectric charging problem in
electrostatically actuated microelectromechanical system (MEMS) devices. The approach is …

Dielectric charging induced drift in micro device reliability-a review

W Zhou, J He, X He, H Yu, B Peng - Microelectronics reliability, 2016 - Elsevier
The movement or migration of charges in dielectric materials like silicon oxide, silicon nitride
and glass, is recognized as one of the most significant causes of drift instability of MEMS …

Nanoscale characterization of the dielectric charging phenomenon in PECVD silicon nitride thin films with various interfacial structures based on Kelvin probe force …

U Zaghloul, GJ Papaioannou, H Wang… - …, 2011 - iopscience.iop.org
This work presents a novel characterization methodology for the dielectric charging
phenomenon in electrostatically driven MEMS devices using Kelvin probe force microscopy …

The effect of temperature on dielectric charging of capacitive MEMS

M Koutsoureli, L Michalas… - 2011 International …, 2011 - ieeexplore.ieee.org
The present paper investigates the effect of temperature on the charging process in
dielectric films of MEMS capacitive switches. The investigation includes the assessment of …

Effect of deposition gas ratio, RF power, and substrate temperature on the charging/discharging processes in PECVD silicon nitride films for electrostatic NEMS/MEMS …

U Zaghloul, GJ Papaioannou… - Journal of …, 2011 - ieeexplore.ieee.org
The dependence of the electrical properties of silicon nitride, which is a commonly used
dielectric in nano-and micro-electromechanical systems (NEMS and MEMS), on the …

Characterization of dielectric charging and reliability in capacitive RF MEMS switches

S Kim, S Cunningham, J McKillop… - 2013 IEEE International …, 2013 - ieeexplore.ieee.org
The characterization of RF MEMS capacitive switch is presented to understand dielectric
charging, failure mode, and hold-down lifetime. The characterization included the …