Trigger-When-Charged: A Technique for Directly Measuring RTN and BTI-Induced Threshold Voltage Fluctuation Under Use-
Low-power circuits are important for many applications, such as Internet of Things. Device
variations and fluctuations are challenging their design. Random telegraph noise (RTN) is …
variations and fluctuations are challenging their design. Random telegraph noise (RTN) is …
PBTI-induced random timing jitter in circuit-speed random logic
J Lu, G Jiao, C Vaz, JP Campbell… - … on Electron Devices, 2014 - ieeexplore.ieee.org
Accurate reliability predictions of real-world digital logic circuits rely heavily on the relevancy
of device-level testing. In the case of bias temperature instability (BTI), where recovery plays …
of device-level testing. In the case of bias temperature instability (BTI), where recovery plays …
Hot-carrier instability of nMOSFETs under pseudorandom bit sequence stress
Y Kim, SC Kang, SK Lee, U Jung… - IEEE Electron Device …, 2016 - ieeexplore.ieee.org
Hot-carrier instability under stress conditions emulating a random logic operation (random
ON and OFF) has been investigated using pseudorandom bit sequence (PRBS) stress …
ON and OFF) has been investigated using pseudorandom bit sequence (PRBS) stress …
[图书][B] Experimental Characterization of Random Telegraph Noise and Hot Carrier Aging of Nano-scale MOSFETs
AB Manut - 2020 - search.proquest.com
One of the emerging challenges in the scaling of MOSFETs is the reliability of ultra-thin gate
dielectrics. Various sources can cause device aging, such as hot carrier aging (HCA) …
dielectrics. Various sources can cause device aging, such as hot carrier aging (HCA) …