Two‐Dimensional Van Der Waals Topological Materials: Preparation, Properties, and Device Applications

G Zhang, H Wu, L Zhang, L Yang, Y Xie, F Guo, H Li… - Small, 2022 - Wiley Online Library
Over the past decade, 2D van der Waals (vdW) topological materials (TMs), including
topological insulators and topological semimetals, which combine atomically flat 2D layers …

Third-order nonlinear Hall effect in a quantum Hall system

P He, H Isobe, GKW Koon, JY Tan, J Hu, J Li… - Nature …, 2024 - nature.com
In two-dimensional systems, perpendicular magnetic fields can induce a bulk band gap and
chiral edge states, which gives rise to the quantum Hall effect. The quantum Hall effect is …

Quantum geometry induced third-order nonlinear transport responses

D Mandal, S Sarkar, K Das, A Agarwal - Physical Review B, 2024 - APS
Nonlinear transport phenomena offer an exciting probe into the band geometry and
symmetry properties of a system. While most studies on nonlinear transport have looked at …

[HTML][HTML] Non-linear Hall effects: Mechanisms and materials

A Bandyopadhyay, NB Joseph, A Narayan - Materials Today Electronics, 2024 - Elsevier
This review presents recent breakthroughs in the realm of nonlinear Hall effects,
emphasizing central theoretical foundations and recent experimental progress. We elucidate …

Gate-Tunable Berry Curvature Dipole Polarizability in Dirac Semimetal

TY Zhao, AQ Wang, XG Ye, XY Liu, X Liao, ZM Liao - Physical Review Letters, 2023 - APS
We reveal the gate-tunable Berry curvature dipole polarizability in Dirac semimetal Cd 3 As
2 nanoplates through measurements of the third-order nonlinear Hall effect. Under an …

Dual-gate all-electrical valleytronic transistors

S Lai, Z Zhang, N Wang, A Rasmita, Y Deng, Z Liu… - Nano Letters, 2023 - ACS Publications
The development of integrated circuits (ICs) based on a complementary metal–oxide–
semiconductor through transistor scaling has reached the technology bottleneck; thus …

Quantum geometry quadrupole-induced third-order nonlinear transport in antiferromagnetic topological insulator MnBi2Te4

H Li, C Zhang, C Zhou, C Ma, X Lei, Z Jin, H He… - Nature …, 2024 - nature.com
The study of quantum geometry effects in materials has been one of the most important
research directions in recent decades. The quantum geometry of a material is characterized …

Third-order charge transport in a magnetic topological semimetal

Z Zhu, H Liu, Y Ge, Z Zhang, W Wu, C Xiao, SA Yang - Physical Review B, 2023 - APS
Magnetic topological materials and their physical signatures are a focus of current research.
By first-principles calculations and symmetry analysis, we reveal exotic topological …

Third-order intrinsic anomalous Hall effect with generalized semiclassical theory

L Xiang, C Zhang, L Wang, J Wang - Physical Review B, 2023 - APS
The linear intrinsic anomalous Hall effect (IAHE) and second-order IAHE have been
intensively investigated in time-reversal broken systems. However, as one of the important …

Linear displacement current solely driven by the quantum metric

L Xiang, B Wang, Y Wei, Z Qiao, J Wang - Physical Review B, 2024 - APS
Quantum metric and Berry curvature are the real part and imaginary part of the quantum
geometric tensor, respectively. The T-odd (T, time-reversal) nonlinear Hall effect driven by …