Characterizing SRAM and FF soft error rates with measurement and simulation

M Hashimoto, K Kobayashi, J Furuta, SI Abe… - Integration, 2019 - Elsevier
Soft error originating from cosmic ray is a serious concern for reliability demanding
applications, such as autonomous driving, supercomputer, and public transportation system …

High robust and cost effective double node upset tolerant latch design for nanoscale CMOS technology

H Li, L Xiao, J Li, C Qi - Microelectronics Reliability, 2019 - Elsevier
In this paper, we propose a novel high reliability and low cost DNU (Double Node Upset)
tolerant latch, HRCE (High Robust and Cost Effective) latch, for nanoscale CMOS …

Wide-range many-core SoC design in scaled CMOS: Challenges and opportunities

S Vangal, S Paul, S Hsu, A Agarwal… - … Transactions on Very …, 2021 - ieeexplore.ieee.org
The system-on-chip (SoC) designs for future Internet of Things (IoT) systems, spanning client
platforms to cloud datacenters, need to deliver uncompromising and scalable performance …

SEU characterization of commercial and custom-designed SRAMs based on 90 nm technology and below

A Coronetti, M Cecchetto, J Wang, M Tali… - 2020 IEEE Radiation …, 2020 - ieeexplore.ieee.org
The R2E project at CERN has tested a few commercial SRAMs and a custom-designed
SRAM, whose data are complementary to various scientific publications. The experimental …

A 32 kb macro with 8T soft error robust, SRAM cell in 65-nm CMOS

JS Shah, D Nairn, M Sachdev - IEEE Transactions on Nuclear …, 2015 - ieeexplore.ieee.org
A 32-kb macro containing an eight-transistor soft error robust SRAM cell with differential
read and write capabilities is presented. The 8T cell does not have dedicated access …

Supply voltage dependence of heavy ion induced SEEs on 65 nm CMOS bulk SRAMs

Q Wu, Y Li, L Chen, A He, G Guo… - … on Nuclear Science, 2015 - ieeexplore.ieee.org
Soft Error Rates (SER) of hardened and unhardened SRAM cells need to be experimentally
characterized to determine their appropriate applications in radiation environments. This …

Measurement and mechanism investigation of negative and positive muon-induced upsets in 65-nm bulk SRAMs

W Liao, M Hashimoto, S Manabe… - … on Nuclear Science, 2018 - ieeexplore.ieee.org
Irradiation experiments of positive and negative muon were conducted for 65-nm bulk
CMOS static random-access memory. The experimental results reveal that parasitic bipolar …

SEU characterization of three successive generations of COTS SRAMs at ultralow bias voltage to 14.2-MeV neutrons

JA Clemente, G Hubert, J Fraire… - … on Nuclear Science, 2018 - ieeexplore.ieee.org
This paper presents a single event upset (SEU) sensitivity characterization at ultralow bias
voltage of three generations of commercial off-the-shelf static random access memories …

Sensitivity characterization of a COTS 90-nm SRAM at ultralow bias voltage

JA Clemente, G Hubert, FJ Franco… - … on Nuclear Science, 2017 - ieeexplore.ieee.org
This paper presents the characterization of the sensitivity to 14-MeV neutrons of a
commercial off-the-shelf 90-nm static random access memories manufactured by Cypress …

Angular dependency of neutron-induced multiple cell upsets in 65-nm 10T subthreshold SRAM

R Harada, SI Abe, H Fuketa, T Uemura… - … on Nuclear Science, 2012 - ieeexplore.ieee.org
This paper reports neutron-induced MCU (Multiple Cell Upset) measured in 0.4-V 65-nm
10T SRAM at two incident angles of 0° and 60°. The measurement results show that the ratio …