High-k dielectrics for 4H-silicon carbide: present status and future perspectives
A Siddiqui, RY Khosa, M Usman - Journal of Materials Chemistry C, 2021 - pubs.rsc.org
Owing to its superior material and electrical properties such as wide bandgap and high
breakdown electric field, 4H-silicon carbide (4H-SiC) has shown promise in high power …
breakdown electric field, 4H-silicon carbide (4H-SiC) has shown promise in high power …
[HTML][HTML] Structural and insulating behaviour of high-permittivity binary oxide thin films for silicon carbide and gallium nitride electronic devices
High-κ dielectrics are insulating materials with higher permittivity than silicon dioxide. These
materials have already found application in microelectronics, mainly as gate insulators or …
materials have already found application in microelectronics, mainly as gate insulators or …
MOS structure with as-deposited ALD Al2O3/4H-SiC heterostructure with high electrical performance: Investigation of the interfacial region
YX Zeng, XR Wang, RY Yang, W Huang… - Journal of Vacuum …, 2024 - pubs.aip.org
The reliability issues in silicon carbide (SiC)-based devices with gate dielectric formed
through heat oxidation are significant factors limiting their application in power devices …
through heat oxidation are significant factors limiting their application in power devices …
Structural, chemical, and metal-oxide-semiconductor characteristics of RF magnetron sputtered thulium oxide passivation layer on 4H-silicon carbide substrate
J Deng, Y Wang, HJ Quah - Applied Surface Science, 2024 - Elsevier
Abstract Thulium oxide (Tm 2 O 3) passivation layer (PL) deposited on 4H-silicon carbide
(SiC) that was subjected to postdeposition annealing at 700° C in forming gas-oxygen …
(SiC) that was subjected to postdeposition annealing at 700° C in forming gas-oxygen …
Development of high-quality gate oxide on 4H-SiC using atomic layer deposition
A systematic post-deposition annealing study on Silicon Carbide (SiC) metal-oxide-
semiconductor capacitors (MOSCAPs) using atomic layer deposition (ALD)-deposited …
semiconductor capacitors (MOSCAPs) using atomic layer deposition (ALD)-deposited …
[HTML][HTML] Increased Mobility in 4H-SiC MOSFETs by Means of Hydrogen Annealing
MI Idris, A Horsfall - Crystals, 2022 - mdpi.com
Enhancement-mode 4H-SiC MOSFETs utilising an aluminium oxide (Al 2 O 3) dielectric
without the requirement for an underlying silicon oxide (SiO 2) layer have been shown to …
without the requirement for an underlying silicon oxide (SiO 2) layer have been shown to …
Impact of SiO2 interfacial layer on the electrical characteristics of Al/Al2O3/SiO2/n-Si metal–oxide–semiconductor capacitors
NT Kimbugwe, E Yilmaz - Journal of Materials Science: Materials in …, 2020 - Springer
The aim of this study is to reduce the oxide and interface-trap charges and also improve the
stability at the oxide–semiconductor interface by growing a SiO 2 interface layer on a Si …
stability at the oxide–semiconductor interface by growing a SiO 2 interface layer on a Si …
Simulation of the effects of postimplantation annealing on silicon carbide DMOSFET characteristics
Technological control of doped regions is exceptionally important for all semiconductor
devices. For the wide bandgap semiconductor silicon carbide, the activation state of dopants …
devices. For the wide bandgap semiconductor silicon carbide, the activation state of dopants …
Surface Treatment of 4H-SiC MOSFETs Prior to Al2O3 Deposition
MI Idris, AB Horsfall - Materials Science Forum, 2020 - Trans Tech Publ
The effect of surface treatments prior to the deposition of Al2O3 is performed on 4H-SiC
MOS capacitors and MOSFETs. 40 nm of Al2O3 were deposited on 4H-SiC using atomic …
MOS capacitors and MOSFETs. 40 nm of Al2O3 were deposited on 4H-SiC using atomic …
Investigation on the ohmic characteristic of Ni/Ti/4H-SiC
Ohmic contact is important for silicon carbide (SiC) devices such as Schottky diode, junction
field effect transistor (JFET) and metal oxide transistor (MOSFET). The effect of post …
field effect transistor (JFET) and metal oxide transistor (MOSFET). The effect of post …