High-throughput identification of spin-photon interfaces in silicon
Color centers in host semiconductors are prime candidates as spin-photon interfaces for
quantum applications. Finding an optimal spin-photon interface in silicon would move …
quantum applications. Finding an optimal spin-photon interface in silicon would move …
A substitutional quantum defect in WS2 discovered by high-throughput computational screening and fabricated by site-selective STM manipulation
Point defects in two-dimensional materials are of key interest for quantum information
science. However, the parameter space of possible defects is immense, making the …
science. However, the parameter space of possible defects is immense, making the …
Expanding PyProcar for new features, maintainability, and reliability
This paper presents a comprehensive update to PyProcar, a versatile Python package for
analyzing and visualizing density functional theory (DFT) calculations in materials science …
analyzing and visualizing density functional theory (DFT) calculations in materials science …
[HTML][HTML] ADAQ: automatic workflows for magneto-optical properties of point defects in semiconductors
Abstract Automatic Defect Analysis and Qualification (ADAQ) is a collection of automatic
workflows developed for high-throughput simulations of magneto-optical properties of point …
workflows developed for high-throughput simulations of magneto-optical properties of point …
Temperature dependence of the AB lines and optical properties of the carbon–antisite-vacancy pair in
Defects in semiconductors have in recent years been revealed to have interesting properties
in the venture towards quantum technologies. In this regard, silicon carbide has shown great …
in the venture towards quantum technologies. In this regard, silicon carbide has shown great …
Characterization of induced quasi-two-dimensional transport in n-type InxGa1−xAs1 − yBiy bulk layer
The temperature-dependent transport properties of n-type InGaAsBi epitaxial alloys with
various doping densities are investigated by conducting magnetoresistance (MR) and Hall …
various doping densities are investigated by conducting magnetoresistance (MR) and Hall …
Structural dynamics in hybrid halide perovskites: Bulk Rashba splitting, spin texture, and carrier localization
The extended charge carrier lifetime in hybrid halide perovskites was attributed to a quasi-
indirect band gap that arises due to a Rashba splitting in both conduction and valence band …
indirect band gap that arises due to a Rashba splitting in both conduction and valence band …
Scaling theory of wave confinement in classical and quantum periodic systems
Functional defects in periodic media confine waves—acoustic, electromagnetic, electronic,
spin, etc.—in various dimensions, depending on the structure of the defect. While defects are …
spin, etc.—in various dimensions, depending on the structure of the defect. While defects are …
Designing transparent conductors using forbidden optical transitions
Many semiconductors present weak or forbidden transitions at their fundamental band gaps,
inducing a widened region of transparency. This occurs in high-performing n-type …
inducing a widened region of transparency. This occurs in high-performing n-type …
Influence of growth kinetics on Sn incorporation in direct band gap Ge 1− x Sn x nanowires
Ge1− xSnx alloys with substantial incorporation of Sn show promise as direct bandgap
group IV semiconductors. This article reports the influence of growth kinetics on Sn inclusion …
group IV semiconductors. This article reports the influence of growth kinetics on Sn inclusion …