On the strong coupling of polarization and charge trapping in HfO2/Si-based ferroelectric field-effect transistors: overview of device operation and reliability
Ferroelectric field-effect transistors (FeFETs) have become an attractive technology for
memory and emerging applications on a silicon electronic platform after the discovery of the …
memory and emerging applications on a silicon electronic platform after the discovery of the …
Hafnia-Based Ferroelectric Memory: Device Physics Strongly Correlated with Materials Chemistry
Hafnia-based ferroelectrics and their semiconductor applications are reviewed, focusing on
next-generation dynamic random-access-memory (DRAM) and Flash. The challenges of …
next-generation dynamic random-access-memory (DRAM) and Flash. The challenges of …
Perspective on ferroelectric devices: lessons from interfacial chemistry
Ferroelectric fluorite-structured oxide thin films have attracted increased interest from both
academia and industry because of their superior scalability─ in which their ferroelectric …
academia and industry because of their superior scalability─ in which their ferroelectric …
Fast read-after-write and depolarization fields in high endurance n-type ferroelectric FETs
Ferroelectric field-effect transistors (FeFETs) based on HfO 2 are promising for low-power
and high-speed non-volatile memory devices. However, most reported FeFETs show limited …
and high-speed non-volatile memory devices. However, most reported FeFETs show limited …
Write disturb-free ferroelectric FETs with non-accumulative switching dynamics
HfO2 based ferroelectric field-effect transistors (FeFETs) are promising for low-power and
high-speed non-volatile memories. However, FeFETs can be susceptible to write disturbs …
high-speed non-volatile memories. However, FeFETs can be susceptible to write disturbs …
BEOL-Compatible MFMIS Ferroelectric/Anti-ferroelectric FETs—Part II: Mechanism With Load Line Analysis and Scaling Strategy
In Part I, we experimentally demonstrated the back-end-of-line (BEOL) compatible
ferroelectric field-effect-transistors (FeFETs) and anti-FeFETs (AFeFETs) with a metal …
ferroelectric field-effect-transistors (FeFETs) and anti-FeFETs (AFeFETs) with a metal …
Modeling the Coupled Charge Trapping Dynamics in FeFETs for Reliability Characterizations
In this article, a compact physics framework is established to characterize the reliability-
related defects in ferroelectric field effect transistors (FeFETs). The two-state nonradiative …
related defects in ferroelectric field effect transistors (FeFETs). The two-state nonradiative …
Unraveling threshold voltage instability in ferroelectric junctionless FETs using low-frequency noise measurement with base bias
This study proposes a novel low-frequency noise (LFN) measurement method to investigate
the origin of threshold voltage (instability in junctionless ferroelectric field-effect transistors …
the origin of threshold voltage (instability in junctionless ferroelectric field-effect transistors …
A Physics-Based Model of Charge Trapping Behavior of Si FeFET With Metal/Ferroelectric/Interlayer/Si Structure
X Sun, J Chai, F Tian, S Zhao, J Duan… - … on Electron Devices, 2023 - ieeexplore.ieee.org
To find the driving force of charge trapping effect of the Si ferroelectric field effect transistor
(FeFET), we propose a physics-based model. This effect occurs at the interface of the …
(FeFET), we propose a physics-based model. This effect occurs at the interface of the …
Origin of charges in bulk Si: HfO2 FeFET probed by nanosecond polarization measurements
MM Dahan, H Mulaosmanovic, O Levit, S Dünkel… - Microelectronic …, 2025 - Elsevier
FeFET technology offers the potential for fast, energy-efficient, low-cost, and high-capacity
non-volatile memory and neuromorphic devices. However, charge trapping significantly …
non-volatile memory and neuromorphic devices. However, charge trapping significantly …