Silicon single-electron devices

Y Takahashi, Y Ono, A Fujiwara… - Journal of physics …, 2002 - iopscience.iop.org
Single-electron devices (SEDs) are attracting a lot of attention because of their capability of
manipulating just one electron. For their operation, they utilize the Coulomb blockade (CB) …

Mesoscopic devices

TJ Thornton - Reports on Progress in Physics, 1995 - iopscience.iop.org
This article is a review of an area of solid state physics which has come to be known as
mesoscopic devices. These structures have an active region ranging in size from 100 AA to …

Room-temperature single-electron memory

K Yano, T Ishii, T Hashimoto… - IEEE transactions on …, 1994 - ieeexplore.ieee.org
This paper presents room-temperature operation, for the first time, of single-electron
memory, in which one electron represents one bit of information. This is made possible by …

[图书][B] Applied scanning probe methods I

B Bhushan, H Fuchs, S Hosaka - 2014 - books.google.com
Examining the physical and technical foundation for recent progress with this technique,
Applied Scanning Probe Methods offers a timely and comprehensive overview of SPM …

Single-electron memory for giga-to-tera bit storage

K Yano, T Ishii, T Sano, T Mine, F Murai… - Proceedings of the …, 1999 - ieeexplore.ieee.org
Starting with a brief review on the single-electron memory and its significance among
various single-electron devices, this paper addresses the key issues which one inevitably …

Single‐electron memory

K Nakazato, RJ Blaikie, H Ahmed - Journal of applied physics, 1994 - pubs.aip.org
A single‐electron memory cell, in which one bit of information is represented by the excess
or shortfall of a precise number of electrons, is described. An experimental memory circuit …

Size dependence of the characteristics of Si single-electron transistors on SIMOX substrates

Y Takahashi, H Namatsu, K Kurihara… - … on Electron Devices, 1996 - ieeexplore.ieee.org
A Si single-electron transistor (SET) was fabricated by converting a one-dimensional (1-D)
Si wire on a SIMOX substrate into a small Si island with a tunneling barrier at each end by …

[图书][B] Theory of modern electronic semiconductor devices

KF Brennan, AS Brown - 2002 - academia.edu
The rapid advancement of the microelectronics industry has continued in nearly exponential
fashion for the past 30 years. Continuous progress has been made in miniaturizing …

Measurement of single electron lifetimes in a multijunction trap

PD Dresselhaus, L Ji, S Han, JE Lukens, KK Likharev - Physical review letters, 1994 - APS
Single electron traps have been shown to hold a single charge for over 2 h at 50 mK (limited
by observation time). The traps, each with an array of seven Al/AlO x/Al tunnel junctions of …

Room-temperature single-electron memory made by pulse-mode atomic force microscopy nano oxidation process on atomically flat α-alumina substrate

K Matsumoto, Y Gotoh, T Maeda, JA Dagata… - Applied Physics …, 2000 - pubs.aip.org
A single-electron memory was fabricated using the improved pulse-mode atomic force
microscopy nano oxidation process which oxidized the surface of the thin titanium (Ti) metal …