[图书][B] Handbook of nitride semiconductors and devices, Materials Properties, Physics and Growth
H Morkoį - 2009 - books.google.com
The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …
of nitride semiconductors with an extraordinary clarity and depth. They present all the …
Thermal effects in AlGaN/GaN/Si high electron mobility transistors
I Saidi, Y Cordier, M Chmielowska, H Mejri… - Solid-State …, 2011 - Elsevier
Group III–nitride compounds are of increasing interest for designing high power and high
temperature transistors. A considerable progress in the growth and process technology of …
temperature transistors. A considerable progress in the growth and process technology of …
2DEG transport properties over temperature for AlGaN/GaN HEMT and AlGaN/InGaN/GaN pHEMT
For the commercial implementation of GaN-based high electron mobility transistor (HEMT)
and GaN-based pseudomorphic HEMT (pHEMT), the temperature dependency of the two …
and GaN-based pseudomorphic HEMT (pHEMT), the temperature dependency of the two …
Hot-phonon effect on power dissipation in a biased channel
M Ramonas, A Matulionis, J Liberis, L Eastman… - Physical Review B …, 2005 - APS
The Monte Carlo simulation of hot-electron energy dissipation is carried out for a biased Al
Ga N∕ Al N∕ Ga N channel. The conduction band profile and electron wave functions are …
Ga N∕ Al N∕ Ga N channel. The conduction band profile and electron wave functions are …
Mechanism of two-dimensional electron gas formation in heterostructures
Mechanism on the formation of two-dimensional electron gas (2DEG) at the interface of
undoped Al x Ga 1− x N with undoped GaN was interpreted through surface band bending …
undoped Al x Ga 1− x N with undoped GaN was interpreted through surface band bending …
Enhanced CO2 reduction capability in an AlGaN/GaN photoelectrode
S Yotsuhashi, M Deguchi, H Hashiba… - Applied Physics …, 2012 - pubs.aip.org
Light illumination of a gallium nitride photoelectrode creates separate electron-hole pairs
that drive water oxidation and CO 2 reduction reactions. Here, we show enhanced …
that drive water oxidation and CO 2 reduction reactions. Here, we show enhanced …
Electron drift velocity in lattice-matched AlInN/AlN/GaN channel at high electric fields
L Ardaravičius, M Ramonas, J Liberis… - Journal of Applied …, 2009 - pubs.aip.org
Hot-electron transport was probed by nanosecond-pulsed measurements for a nominally
undoped two-dimensional channel confined in a nearly lattice-matched Al 0.82 In 0.18 …
undoped two-dimensional channel confined in a nearly lattice-matched Al 0.82 In 0.18 …
High temperature dependence of the density of two-dimensional electron gas in Al0.18Ga0.82N/GaN heterostructures
Temperature dependence of the density of two-dimensional electron gas (2DEG) in Al 0.18
Ga 0.82 N/GaN heterostructures has been investigated by means of high temperature Hall …
Ga 0.82 N/GaN heterostructures has been investigated by means of high temperature Hall …
Ternary mixed crystal effect on electron mobility in a strained wurtzite AlN/GaN/AlN quantum well with an InxGa1− xN nanogroove
Y Qu, SL Ban - Journal of Applied Physics, 2011 - pubs.aip.org
Based on the dielectric continuum phonon model, uniaxial model and force balance
equation, the influence of an In x Ga 1− x N nanogroove inserted in a strained wurtzite …
equation, the influence of an In x Ga 1− x N nanogroove inserted in a strained wurtzite …
Effects of two-mode transverse optical phonons in bulk wurtzite AlGaN on electronic mobility in AlGaN/GaN quantum wells
Z Gu, SL Ban, DD Jiang, Y Qu - Journal of Applied Physics, 2017 - pubs.aip.org
The two-mode property of bulk transverse optical (TO) phonons in ternary mixed crystals of
wurtzite Al x Ga 1-x N has been investigated by introducing impurity modes in a modified …
wurtzite Al x Ga 1-x N has been investigated by introducing impurity modes in a modified …