Owing to the superior properties of silicon carbide (SiC), such as higher breakdown voltage,
higher thermal conductivity, higher operating frequency, higher operating temperature, and …

This paper reviews recent trends in power semiconductor device technology that are leading
to improvements in power losses for power electronic systems. In the case of low voltage (< …

Silicon offers multiple advantages to power circuit designers, but at the same time suffers
from limitations that are inherent to silicon material properties, such as low bandgap energy …

The physical and chemical properties of wide bandgap semiconductors silicon carbide and
diamond make these materials an ideal choice for device fabrication for applications in …

Despite silicon carbide's (SiC's) high breakdown electric field, high thermal conductivity and
wide bandgap, it faces certain reliability challenges when used to make conventional power …

During the last 30 years, significant progress has been made to improve our understanding
of gallium nitride and silicon carbide device structures, resulting in experimental …

Effects of surface defects on performance of kV-class 4H-and 6H-SiC epitaxial pn junction
diodes were investigated. The perimeter recombination and generation, instead of the bulk …

Recent progress in silicon carbide (SiC) material has made it feasible to build power devices
of reasonable current density. This paper presents results including a comparison with state …

The present status of the silicon carbide and gallium nitride bipolar power semiconductor
devices is reviewed. Several unipolar and bipolar figures of merit have been examined to …

Distributed energy resources (DERs) are becoming integral components of electric power
distribution systems. In most cases, an isolated DC-DC converter forms part of the interface …