A new and tunable method for the NDR engineering of nanoribbon materials and devices
The commonly used method to engineer the negative differential resistance (NDR) of
nanoribbon materials and devices is engineering nanoribbon structures, suffering from …
nanoribbon materials and devices is engineering nanoribbon structures, suffering from …
The negative differential resistance behaviors of zigzag GeSe nanoribbons with unilateral edge passivation via hydrogen, fluorine and chlorine
C Guo, S Hao, T Wang - Journal of Electronic Materials, 2023 - Springer
Quasi-two-dimensional GeSe nanoribbons have immense potential application in
nanoelectronics and photoelectronics because of their high environmental stability, earth …
nanoelectronics and photoelectronics because of their high environmental stability, earth …
Spin-dependent transport properties of a tetra-coordinated Fe (II) spin-crossover complex
J Bian, J Gao, M Duan, Y Chang, H Wang - Journal of Magnetism and …, 2023 - Elsevier
Spin-crossover (SCO) complexes are being regarded as one of the most promising
components of molecular spintronics, since they can exhibit different spin states (high …
components of molecular spintronics, since they can exhibit different spin states (high …