Challenges and opportunities for high-power and high-frequency AlGaN/GaN high-electron-mobility transistor (HEMT) applications: A review
The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has
the potential to deliver high power and high frequency with performances surpassing …
the potential to deliver high power and high frequency with performances surpassing …
A Novel Physics-Based Approach to Analyze and Model E-Mode p-GaN Power HEMTs
In this article, a physics-based analytical model which considers the channel charge (Q ch)
for enhancement-mode p-GaN power high-electron-mobility transistors (HEMTs) is …
for enhancement-mode p-GaN power high-electron-mobility transistors (HEMTs) is …
Impact of AlInN Back-Barrier Over AlGaN/GaN MOS-HEMT With HfO₂ Dielectric Using Cubic Spline Interpolation Technique
The dc characteristics of AlGaN/gallium nitride (GaN) metal-oxide-semiconductor-high
electron mobility transistor (MOS-HEMT) with an AlInN back-barrier layer has been studied …
electron mobility transistor (MOS-HEMT) with an AlInN back-barrier layer has been studied …
A Physics-Based Analytic Model for p-GaN HEMTs
This article introduces a physics-based framework for modeling drain current in p-GaN gate
high electron mobility transistors (p-GaN HEMTs). The model is constructed on fundamental …
high electron mobility transistors (p-GaN HEMTs). The model is constructed on fundamental …
Small-signal modeling and parameter extraction method for a multigate GaAs pHEMT switch
L Luo, J Liu, G Wang, Y Wu - Journal of Semiconductors, 2020 - iopscience.iop.org
This paper presents an accurate small-signal model for multi-gate GaAs pHEMTs in
switching-mode. The extraction method for the proposed model is developed. A 2-gate …
switching-mode. The extraction method for the proposed model is developed. A 2-gate …
Performance analysis of gallium nitride-based DH-HEMT with polarization-graded AlGaN back-barrier layer
In this paper, polarization-graded AlGaN back-barrier nanolayer has been introduced to
improve the DC and RF parameters of gallium nitride-based high electron mobility …
improve the DC and RF parameters of gallium nitride-based high electron mobility …
Analytical model development of channel potential, electric field, threshold voltage and drain current for gate workfunction engineered short channel E-mode N-polar …
In this paper an enhancement mode (E-mode) short channel N-polar GaN MOS-HEMT is
proposed. In order to mitigate different short channel effects, workfunction engineering …
proposed. In order to mitigate different short channel effects, workfunction engineering …
Small-signal model parameter extraction of E-mode N-polar GaN MOS-HEMT using optimization algorithms and its comparison
An improved small-signal parameter extraction technique for short channel enhancement-
mode N-polar GaN MOS-HEMT is proposed, which is a combination of a conventional …
mode N-polar GaN MOS-HEMT is proposed, which is a combination of a conventional …
Breakdown Characteristics Study of III-Nitride/ Nano-HEMT as a function of Field-Plate Length & AlN Nucleation Layer Thickness
Group III-nitride semiconductors such as (Al, Ga, In) N and their alloys have increasingly
attracted the attention of worldwide researchers due to their unique material properties …
attracted the attention of worldwide researchers due to their unique material properties …
Effects of trap density on drain current LFN and its model development for E-mode GaN MOS-HEMT
In this paper the drain current low-frequency noise (LFN) of E-mode GaN MOS-HEMT is
investigated for different gate insulators such as SiO 2, Al 2 O 3/Ga 2 O 3/GdO 3, HfO 2/SiO …
investigated for different gate insulators such as SiO 2, Al 2 O 3/Ga 2 O 3/GdO 3, HfO 2/SiO …