Using rapid thermal annealing, we fabricated a series of InAs/GaAs quantum dot samples
with ground-state emission ranging from 1.05 eV to 1.35 eV. This set of annealed samples …

We have investigated the temperature dependence of photoluminescence (PL) properties of
a number of self-organized InAs/GaAs heterostructures with InAs layer thickness ranging …

Large energy shifts in the luminescence emission from strained InGaAs quantum dots are
observed as a result of postgrowth annealing and also when raising the upper cladding …

We report on the optical characterization of the strained InGaAs/GaAs quantum dots (QDsj.
The temperature dependence of the photoluminescence (PL) indicates that the onset energy …

Photoluminescence (PL) upconversion is a phenomenon involving light–matter interactions,
where the energy of emitted photons is higher than that of the incident photons. PL …

We report time-resolved photoluminescence measurements as a function of temperature for
InAs quantum dots grown by molecular-beam epitaxy on GaAs (100). As the temperature is …

Efficient photoluminescence (PL) up-conversion has been observed in colloidal CdTe
quantum dots with an energy gain of as high as 360 meV. Compared with the normal PL, the …

The photoluminescence (PL) emission from InGaAs/GaAs quantum-well and quantum-dot
(QD) structures are compared after controlled irradiation with 1.5 MeV proton fluxes. Results …

Monolayer tungsten disulfide (1L-WS2) is a direct bandgap atomic-layered semiconductor
material with strain tunable optical and optoelectronic properties among the monolayer …

Several ensembles of self-assembled quantum dots (QDs) based on the AlInAsAl/GaAs and
InGaAs/GaAs material systems have been investigated using photoluminescence (PL), PL …