Heterointegrated Ga2O3-on-SiC RF MOSFETs With f T/f max of 47/51 GHz by Ion-Cutting Process

X Yu, W Xu, Y Wang, B Qiao, R Shen… - IEEE Electron …, 2023 - ieeexplore.ieee.org
Heterointegrated Ga2O3-on-SiC radio-frequency (RF) MOSFETs with record-high frequency
performances were reported. A two-dimensional electron gas like channel with a high …

Novel digital terahertz device for three-state logic gate and phase coding based on graphene and Schottky barrier junctions

Z Li, K Yin, J Zhao, R Xu, T Zhang, L Xu, P Zhou… - Optics and Lasers in …, 2024 - Elsevier
Terahertz technology, III-V group semiconductor devices, and graphene have great potential
for broad applications in 6 G wireless communications. A novel digital terahertz device with …

[PDF][PDF] Capacitance-voltage profiling techniques for characterization of semiconductor materials and devices

MJ Cristea - arXiv preprint arXiv:1011.3463, 2010 - arxiv.org
CV measurement for semiconductor junctions Page 1 Capacitance-voltage profiling
techniques for characterization of semiconductor materials and devices Miron J. Cristea ‘Politehnica’ …

Electric field distribution and voltage breakdown modeling for any PN junction

N Rouger - COMPEL: The International Journal for Computation …, 2016 - emerald.com
Purpose–Scientists and engineers have been solving Poisson's equation in PN junctions
following two approaches: analytical solving or numerical methods. Although several efforts …

CV parameter extraction technique for characterisation the diffused junctions of semiconductor devices

MJ Cristea, F Babarada - 2008 International Semiconductor …, 2008 - ieeexplore.ieee.org
Considering the Gaussian model for the diffused junctions and beginning with the electric
charge density equation applied for the semiconductor junctions, new relations for the …

An Overview of Current Display Technologies and Possible Future Technologies

A Phadke - 2019 IEEE International Conference on Electrical …, 2019 - ieeexplore.ieee.org
This paper focuses on current display technologies which are dominant in the market. Merits
and demerits of current display technologies have been analysed. Various display …

[PDF][PDF] Analytical formulas and measurement technique for the built-in potential of practical semiconductor junctions

M Cristea - Carpathian Journal of Electronic and Computer …, 2019 - sciendo.com
Based on Gauss' law for the electric field, new formulas were deduced, that enable for the
first time the writing of an analytical formula of the built-in potential of implanted and diffused …

[PDF][PDF] MĚŘENÍ KAPACITY VYSOKONAPET'OVÝCH PŘECHODŮ PN

PBA DERISHEV, J Boušek - core.ac.uk
Práce se zabývá měřením kapacity vysokonapěťových PN přechodů. Práce je rozdělena na
část teoretickou a praktickou. Teoretická část podává pohled základních vlastností PN …