CH Chou, SJ Chang, YT Ho, CH WU… - US Patent App. 17 …, 2023 - Google Patents
A device comprises a plurality of 2D semiconductor nano structures, a gate structure, a source region, and a drain region. The plurality of 2D semiconductor nanostructures extend …
C Hu, SJ Chang, C Chen-Han, YT Ho… - US Patent …, 2023 - Google Patents
An IC structure comprises a first transistor formed on a substrate, a first interconnect structure over the first transistor, a dielectric layer over the first interconnect structure, a plurality of 2D …
MT Ryu, SH Uhm, KS Lee, MS Lee, WS Lee… - US Patent …, 2024 - Google Patents
A semiconductor memory device with improved performance by improving interface characteristics while reducing a leakage current, and a method for fabricating the same are …
HY Yeh - US Patent 10,998,321, 2021 - Google Patents
A semiconductor device includes a buried word line in a substrate and extending along a first direction, a stacked nanowire structure over the buried word line, a first source/drain …