(57) ABSTRACT A semiconductor device includes a first fin type pattern and a second fin
type pattern, which are isolated from each other by an isolating trench, and extend in a first …

H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or
switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier …

Methods of itting fins, and structures formed thereby, are described. In an embodiment, a
structure includes a first fin and a second fin on a substrate, and a fin cut-fill structure …

A method for fabricating semiconductor device includes the steps of: forming a fin-shaped
structure on a substrate; forming a shallow trench isolation (STI) around the fin-shaped …

(57) ABSTRACT A method for manufacturing a semiconductor device includes forming a fin
on a substrate, removing one or more portions of the fin prior to forming a gate structure on …

An integrated circuit (IC) device includes a first region and a second region adjacent to each
other along a first direction on a substrate, fin patterns in each of the first and second regions …

(Continued) Primary Examiner–Jonathan Han (74) Attorney, Agent, or Firm–Vazken
Alexanian; Otterstedt, Wallace & Kammer, LLP (57) ABSTRACT Compressive and tensile …

(57) ABSTRACT A method includes providing a semiconductor structure having a substrate
and a plurality of fins extending upwards from the substrate. A CT pillar layer is disposed …

US10825741B2 - Methods of forming single diffusion breaks on integrated circuit products
comprised of FinFET devices and the resulting products - Google Patents US10825741B2 …

An integrated circuit device includes a substrate from which a plurality of fin-type active
regions protrude, the plurality of fin-type active regions extending in parallel to one another …