Overcoming the doping limit in GaAs by ion implantation and pulsed laser melting
Most semiconductors exhibit a saturation of free carriers when heavily doped with extrinsic
dopants. This carrier saturation or “doping limit” is known to be related to the formation of …
dopants. This carrier saturation or “doping limit” is known to be related to the formation of …
Laser–plasma simulations of astrophysical phenomena and novel applications to semiconductor annealing
J Grun, M Laming, C Manka, DW Donnelly… - Laser and Particle …, 2003 - cambridge.org
At the frontier of plasma physics and technology are applications of laser-generated
plasmas to laboratory simulations of astrophysical phenomena and to industrial processing …
plasmas to laboratory simulations of astrophysical phenomena and to industrial processing …
Effect of film thickness and laser energy density on the microstructure of a-GaAs films after excimer laser crystallization
A KrF excimer laser with 30 ns pulse duration is used for crystallization of a-GaAs grown on
silicon substrate using molecular beam epitaxy technique. The effect of laser energy density …
silicon substrate using molecular beam epitaxy technique. The effect of laser energy density …
Structural modifications of silicon-implanted GaAs induced by the athermal annealing technique
SB Qadri, M Yousuf, CA Kendziora, B Nachumi… - Applied Physics A, 2004 - Springer
We have used high-resolution X-ray diffraction and Raman spectroscopy to investigate
structural modifications inside and outside the focal region of Si-implanted GaAs samples …
structural modifications inside and outside the focal region of Si-implanted GaAs samples …
Optical and Surface Structure Modification of Gallium Arsenide
AR Yadav, SK Dubey, A Karande… - International Journal of …, 2024 - World Scientific
The surface morphology modification and optical property modification of semi-insulating
gallium arsenide sample implanted with 100 keV silicon ions with the fluences ranging …
gallium arsenide sample implanted with 100 keV silicon ions with the fluences ranging …
Effects of silicon negative ion implantation in semi-insulating gallium arsenide
In the present work, effects of silicon negative ion implantation into semi-insulating gallium
arsenide (GaAs) samples with fluences varying between 1× 1015 and 4× 1017 ions cm− 2 at …
arsenide (GaAs) samples with fluences varying between 1× 1015 and 4× 1017 ions cm− 2 at …
Athermal annealing of Mg-implanted GaAs
High-resolution X-ray diffraction scans and electrical resistivity measurements were
performed on Mg-implanted GaAs exposed to laser shock annealing on both the implanted …
performed on Mg-implanted GaAs exposed to laser shock annealing on both the implanted …
Study of Low Energy (50 keV) Silicon Negative ion Implantation in GaAs
In the present work, semi-insulating GaAs samples implanted with 50 keV silicon negative
ions with fluences varying from 1 x 10 14 to 1 x 10 16 ions cm-2 have been investigated …
ions with fluences varying from 1 x 10 14 to 1 x 10 16 ions cm-2 have been investigated …