Ultra-wide bandgap materials show great promise as a solution to some of the limitations of
current state of the art semiconductor technology. Among these, diamond has exhibited …

The electronic properties of inversion and accumulation layers at semiconductor-insulator
interfaces and of other systems that exhibit two-dimensional or quasi-two-dimensional …

Realization of ferromagnetism in the two-dimensional (2D) van der Waals (vdW) crystals
opens up a vital route to understand the magnetic ordering in the 2D limit and to design …

Intercalation of the layer type transition metal dichalcogenides by a variety of organic
molecules, alkali metals, or '3d'transition metals, provides a powerful way to finely tune the …

We report the synthesis and evidence of graphene fluoride, a two-dimensional wide
bandgap semiconductor derived from graphene. Graphene fluoride exhibits hexagonal …

The history of this field is reviewed, with emphasis on the relationship to the development of
molecular field concepts in dielectric theory, in the last century, and with emphasis on the …

The paper examines states in the gap in amorphous silicon and chalcogenides and their
effect on photoconductivity, luminescence and drift mobility. It is supposed that carriers in an …

We examine the effects of the electron-electron interaction on the Anderson transition. It is
shown that the dimensionality of the system and the range of the interaction are crucial in …

We investigate the low-temperature electron transport properties of chemically reduced
graphene oxide (RGO) sheets with different carbon sp 2 fractions of 55% to 80%. We show …

Electrical and thermal transport properties of synthetic tetrahedrites Cu10TM2Sb4S13 (TM=
Mn, Fe, Co, Ni, Zn) and the solid solution Cu12–x Mn x Sb4S13 (0≤ x≤ 2) have been …