A passivating contact for silicon solar cells formed during a single firing thermal annealing
Passivating contacts are indispensable for achieving high conversion efficiency in crystalline-
silicon solar cells. Their realization and integration into a convenient process flow have …
silicon solar cells. Their realization and integration into a convenient process flow have …
Wide band-gap silicon-carbon alloys deposited by very high frequency plasma enhanced chemical vapor deposition
The use of very high frequency (VHF) plasma enhanced chemical vapor deposition in a
capacitive discharge is investigated to fabricate hydrogenated amorphous silicon carbon …
capacitive discharge is investigated to fabricate hydrogenated amorphous silicon carbon …
Post thermal annealing crystallization and reactive ion etching of SiC films produced by PECVD
AR Oliveira, MNP Carreno - Journal of Non-Crystalline Solids, 2006 - Elsevier
Crystallization of a-SiC: H films obtained by PECVD technique at low temperatures and
results on corrosion by reactive ion etching (RIE) of these films are presented. The …
results on corrosion by reactive ion etching (RIE) of these films are presented. The …
Annealing effects of highly homogeneous a-Si1− xCx: H
We report the effect of annealing on the properties of amorphous hydrogenated silicon
carbide thin films. The samples were deposited onto different substrates by plasma …
carbide thin films. The samples were deposited onto different substrates by plasma …
Self-sustained bridges of a-SiC: H films obtained by PECVD at low temperatures for MEMS applications
MNP Carreño, AT Lopes - Journal of Non-Crystalline Solids, 2004 - Elsevier
In this work PECVD obtained a-SiC: H films are utilized to fabricate self sustained
microbridges and microtunnels. The deposition conditions for these films, which present …
microbridges and microtunnels. The deposition conditions for these films, which present …
N and p-type doping of PECVD a-SiC: H obtained under “silane starving plasma” condition with and without hydrogen dilution
AR Oliveira, MNP Carreño - Materials Science and Engineering: B, 2006 - Elsevier
N and p-type doping of highly structural and chemically ordered a-Si0. 5C0. 5: H films are
studied. Ion implantation is utilized as doping technique and the films are obtained by rf …
studied. Ion implantation is utilized as doping technique and the films are obtained by rf …
Effect of RF power and gas flow ratio on the growth and morphology of the PECVD SiC thin film s for MEMS applications
Abstract Low temperature PECVD (Plasma Enhanced Chemical Vapour Deposition)
deposited SiC thin films are promising materials for development of high temperature …
deposited SiC thin films are promising materials for development of high temperature …
Thermally actuated a-SiC: H MEMS fabricated by a PECVD process
G Rehder, MNP Carreño - Journal of non-crystalline solids, 2006 - Elsevier
The fabrication of a fully operational thermally actuated MEMS based on PECVD materials is
reported. These micro-electro-mechanical systems consist of matrixes of free standing a …
reported. These micro-electro-mechanical systems consist of matrixes of free standing a …
Hydrogen effusion from highly-ordered near-stoichiometric a-SiC: H
In this work, highly-ordered close-to-stoichiometry a-SiC: H alloys deposited by PECVD
under the deposition conditions of asilane-starving regime'and strong hydrogen dilution …
under the deposition conditions of asilane-starving regime'and strong hydrogen dilution …
Structural and electrical properties of low-temperature PECVD SiC/c-Si heterostructures
AR Oliveira, I Pereyra, MNP Carreno - Materials Science and Engineering …, 2004 - Elsevier
The structural and electrical properties of the SiC/Si heterostructure based on undoped
stoichiometric a-SiC: H thin films grown by rf plasma chemical vapor deposition at low …
stoichiometric a-SiC: H thin films grown by rf plasma chemical vapor deposition at low …