The conversion of electric power to light is an important scientific and technological
challenge. Advanced experimental methods have provided access to explore the relevant …

Luminescence of p-type GaAs was induced by electron injection from the tip of a scanning
tunnelling microscope into a GaAs (110) surface. Atomically-resolved photon maps revealed …

The high stability of a low temperature (9 K) scanning tunneling microscope junction is used
to precisely adjust the enhancement of an external pulsed vacuum ultraviolet (VUV) laser …

We have investigated the fabrication of a single silver nanoparticle (AgNP) on Si (111) at
room temperature using scanning tunneling microscopy (STM), and the luminescence of …

The tip of a scanning tunnelling microscope can inject hot electrons into a surface with
atomic precision. Their subsequent dynamics and eventual decay can result in atomic …

The role of silver localized surface plasmons (LSPs) on the luminescence of a Si (111)-(7×
7) surface has been investigated by scanning tunneling microscopy (STM) with a silver tip at …

Sensitized wide band-gap semiconductors have long been considered as materials for
photovoltaics. However, not until the discovery by Gratzel and co-workers, 1 that a material …

In this thesis we aim to develop further understanding of the mechanisms leading to the
nonlocal manipulation of adsorbed aromatic molecules on a Si (111)-7× 7 surface. The …

Electron injection from the tip of a scanning tunneling microscope into a p-type GaAs (110)
surface have been used to induce luminescence in the bulk. Atomically-resolved photon …

With its introduction in 1981, the scanning tunneling microscope (STM) has sparked a
revolution in nanoscale characterization techniques and enabled a detailed view of …