Image sensors made using silicon complementary metal–oxide–semiconductor technology
can be found in numerous electronic devices and typically rely on pinned photodiode …

Silicon-based complementary metal oxide semiconductor (CMOS) devices have dominated
the technological revolution in the past decades. With increasing demands in machine …

After the use of nanocrystals as light downconverters, infrared sensing appears to be one of
the first market applications where they can be used while being both electrically and …

While the integration of nanocrystals as an active medium for optoelectronic devices
progresses, light management strategies are becoming required. Over recent years, several …

Infrared imaging is extensively explored due to its unique properties of high atmospheric
transmission and temperature-dependent emission. Unfortunately, the current epitaxial …

Taking advantage of tunable optical properties and silicon technique compatibility, colloidal
quantum dots (CQDs) provide a simpler process for building infrared focal plane arrays …

Infrared photodetection enables depth imaging techniques such as structured light and time-
of-flight. Traditional photodetectors rely on silicon (Si); however, the bandgap of Si limits …

Solution-processed colloidal quantum dots (CQDs) photodiodes are compatible for
monolithic integration with silicon-based readout circuit, enabling high-performance and low …

Low noise () and high responsivity () are significant factors for Lead sulfide (PbS) colloidal
quantum dots (CQDs) photodetectors implementing high specific detectivity (). However, the …

Image sensors are must-have components of most consumer electronics devices. They
enable portable camera systems, which find their way into billions of devices annually. Such …