Hafnium Oxide (HfO2) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories

W Banerjee, A Kashir, S Kamba - Small, 2022 - Wiley Online Library
Hafnium oxide (HfO2) is one of the mature high‐k dielectrics that has been standing strong
in the memory arena over the last two decades. Its dielectric properties have been …

Device and materials requirements for neuromorphic computing

R Islam, H Li, PY Chen, W Wan, HY Chen… - Journal of Physics D …, 2019 - iopscience.iop.org
Energy efficient hardware implementation of artificial neural network is challenging due
the'memory-wall'bottleneck. Neuromorphic computing promises to address this challenge by …

[HTML][HTML] Resistive switching in emerging materials and their characteristics for neuromorphic computing

M Asif, A Kumar - Materials Today Electronics, 2022 - Elsevier
Resistive random access memory would be an important component of microelectronics in
the era of big data storage due to its efficient characteristics such as low cost, fast operating …

Advances in resistive switching based memory devices

S Munjal, N Khare - Journal of Physics D: Applied Physics, 2019 - iopscience.iop.org
Among the emerging memories, resistive switching (RS) based resistive random-access
memories (RRAMs) are attracting lots of attention due to their simple metal–insulator–metal …

Nitrogen doping effect on InGaZnO-based artificial synapse for implementing reservoir computing and SVHN dataset pattern recognition

C Mahata, H So, D Ju, M Ismail, S Kim, CC Hsu, K Park… - Nano Energy, 2024 - Elsevier
This work focused on plasma-induced nitrogen-doped indium gallium zinc oxide (InGaZnO:
N) based resistive switching devices. Nitrogen atoms in the InGaZnO: N can reduce the …

Interface-engineered reliable HfO 2-based RRAM for synaptic simulation

Q Wang, G Niu, S Roy, Y Wang, Y Zhang… - Journal of Materials …, 2019 - pubs.rsc.org
Future synaptic simulation using resistance random access memory (RRAM) requires higher
reliability and lower power consumption of the devices and understanding of the correlation …

Insights into synaptic functionality and resistive switching in lead iodide flexible memristor devices

M Jain, MJ Patel, L Liu, J Gosai, M Khemnani… - Nanoscale …, 2024 - pubs.rsc.org
Neuromorphic platforms are gaining popularity due to their superior efficiency, low power
consumption, and adaptable parallel signal processing capabilities, overcoming the …

Resistive switching, endurance and retention properties of ZnO/HfO2 bilayer heterostructure memory device

N Jain, SK Sharma, R Kumawat, PK Jain… - Micro and …, 2022 - Elsevier
This work reports the fabrication of resistive memory device with a bilayer ZnO/HfO 2
structure. Highly stable and uniform bipolar resistance switching (RS) characteristics were …

Bipolar resistive switching behavior and endurance in RF-sputtered bilayer HfO2/ZrO2 resistive random access memory

LK Lata, PK Jain - Emergent Materials, 2023 - Springer
This study presents a novel bilayer resistive random access memory (RRAM) device utilizing
hafnium dioxide (HfO2) and zirconium dioxide (ZrO2) layers. By introducing an HfO2 …

An Opto-Electronic HfOx-Based Transparent Memristive Synapse for Neuromorphic Computing System

A Saleem, D Kumar, F Wu, LB Keong… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
In this study, a transparent bilayer memristor showing both electrical and optical synapses
along with good electrical properties after annealing is presented. In addition to 85 …