This paper presents an extensive Victory TCAD based assessment to evaluate the device
performance under heavy ion particle strike induced single event effects (SEEs). The impact …

InP-based hetero-junction bipolar transistors (HBTs) are attractive for various millimeter-
wave and terahertz electronics due to their ultrahigh frequency performance. Therefore, the …

In this paper, the effects of thermal annealing on the radiated InP-based high electron
mobility transistors (HEMTs) is investigated. Proton irradiation is performed with energy of 2 …

An anti-radiation structure of InP-based high electron mobility transistor (HEMT) has been
proposed and optimized with double Si-doped planes. The additional Si-doped plane under …

With the increasing maturity of material preparation and device process technology,
InAs/GaSb type-II superlattices (T2SLs) have become a crucial material system for a new …

This work aims to study the radiation influence characteristics of strained-GaN-based high
electron mobility transistors (HEMTs). GaN-based HEMTs are made of the heterostructures …

We fabricated a set of symmetric gate-recess devices with gate length of 70 nm. We kept the
source-to-drain spacing (L SD) unchanged, and obtained a group of devices with gate …

In this paper, InP-based high electron mobility transistors were investigated for an electron
fluence of 5× 10 15 cm− 2 at 1 MeV. The channel current and transconductance were …

In this paper, the Primary Knock-on Atoms (PKAs) density and energy distributions in InAlAs
and InGaAs materials have been analyzed by an energy stopping power improved Monte …

In this paper, a hardened single event effects in InP-based HEMT with a InGaAs/InAs/InGaAs
composite channel (CC HEMT) is investigated by the two-dimensional numerical …