A survey of SRAM-based in-memory computing techniques and applications

S Mittal, G Verma, B Kaushik, FA Khanday - Journal of Systems …, 2021 - Elsevier
As von Neumann computing architectures become increasingly constrained by data-
movement overheads, researchers have started exploring in-memory computing (IMC) …

A 4 + 2T SRAM for Searching and In-Memory Computing With 0.3-V

Q Dong, S Jeloka, M Saligane, Y Kim… - IEEE Journal of Solid …, 2017 - ieeexplore.ieee.org
This paper presents a 4+ 2T SRAM for embedded searching and in-memory-computing
applications. The proposed SRAM cell uses the n-well as the write wordline to perform write …

A 0.45–1 V fully-integrated distributed switched capacitor DC-DC converter with high density MIM capacitor in 22 nm tri-gate CMOS

R Jain, BM Geuskens, ST Kim… - IEEE Journal of Solid …, 2014 - ieeexplore.ieee.org
A fully integrated switched capacitor voltage regulator (SCVR) with on-die high density MIM
capacitor, distributed across a 14 KB register file (RF) load is demonstrated in 22 nm tri-gate …

5.6 Mb/mm 1R1W 8T SRAM Arrays Operating Down to 560 mV Utilizing Small-Signal Sensing With Charge Shared Bitline and Asymmetric Sense Amplifier in 14 nm …

JP Kulkarni, J Keane, KH Koo, S Nalam… - IEEE Journal of Solid …, 2016 - ieeexplore.ieee.org
Multiported high-performance on-die memories occupy significantly more die area than a
comparable single-port memory. Among various multiport memory topologies, the 1-read …

Analytical modelling and design of 9T SRAM cell with leakage control technique

JK Mishra, H Srivastava, PK Misra… - Analog Integrated Circuits …, 2019 - Springer
This paper presents a novel 9T static random access memory (SRAM) cell consisting of a
single ended isolated read bit line with 2T read port for improving stability and a tail …

5.7 A graphics execution core in 22nm CMOS featuring adaptive clocking, selective boosting and state-retentive sleep

C Tokunaga, JF Ryan, C Augustine… - … Solid-State Circuits …, 2014 - ieeexplore.ieee.org
The demand for high-performance graphics capability even in extremely power-constrained
platforms such as smartphones and tablets requires circuit techniques that scale from …

A 5GHz 7nm L1 cache memory compiler for high-speed computing and mobile applications

M Clinton, R Singh, M Tsai, S Zhang… - … Solid-State Circuits …, 2018 - ieeexplore.ieee.org
In high performance computing (HPC) applications, the speed of the L1 cache will typically
determine the maximum frequency (/Max) of the processor core. Companies that mass …

A 32 kb 0.35–1.2 V, 50 MHz–2.5 GHz bit-interleaved SRAM with 8 T SRAM cell and data dependent write assist in 28-nm UTBB-FDSOI CMOS

A Grover, GS Visweswaran… - … on Circuits and …, 2017 - ieeexplore.ieee.org
An optimized co-design of SRAM cell, assist schemes, and layout is proposed to achieve
wide voltage range operation of SRAM from 0.35-1.2 V at all process corners. A differential …

Multi-Vdd Design for Content Addressable Memories (CAM): A Power-Delay Optimization Analysis

S Joshi, D Li, S Ogrenci-Memik, G Deptuch… - Journal of Low Power …, 2018 - mdpi.com
In this paper, we characterize the interplay between power consumption and performance of
a matchline-based Content Addressable Memory and then propose the use of a multi-Vdd …

17.2 5.6 Mb/mm2 1R1W 8T SRAM arrays operating down to 560mV utilizing small-signal sensing with charge-shared bitline and asymmetric sense amplifier in 14nm …

J Keane, J Kulkarni, KH Koo, S Nalam… - … Solid-State Circuits …, 2016 - ieeexplore.ieee.org
System-on-Chip (SoC) designs contain a variety of IP blocks which use multiport memories
to improve performance by enabling multiple simultaneous operations in the same memory …