Realizing efficient on-chip light sources has long been the “holy-grail” for Si-photonics
research. Several important breakthroughs were made in this field in the past few years. In …

Si-based group III-V material enables a multitude of applications and functionalities of the
novel optoelectronic integration chips (OEICs) owing to their excellent optoelectronic …

Monolithic integration of III-V semiconductor devices on Silicon (Si) has long been of great
interest in photonic integrated circuits (PICs), as well as traditional integrated circuits (ICs) …

With continuously growing global data traffic, silicon (Si)-based photonic integrated circuits
have emerged as a promising solution for high-performance Intra-/Inter-chip optical …

All semiconductors, whether by design or by accident, contain defects. The fundamental
properties of defects, such as impurities, native defects, and extended defects, affect a broad …

To achieve on-chip lasers for Si-photonics, monolithic integration using selective epitaxy is a
favorable option due to the unique defect engineering and resultant bufferless structure …

Current heterogeneous Si photonics usually bond III–V wafers/dies on a silicon-on-insulator
(SOI) substrate in a back-end process, whereas monolithic integration by direct epitaxy …

Investigation of high-performance lasers monolithically grown on silicon (Si) could promote
the development of silicon photonics in regimes other than the 1.3-1.5 µm band. 980 nm …

A reliable, efficient and electrically-pumped Si-based laser is considered as the main
challenge to achieve the integration of all key building blocks with silicon photonics. Despite …

The rapid development of emerging technologies observed in recent years, such as artificial
intelligence, machine learning, mobile internet, big data, cloud computing, and the Internet …