Amorphous oxide semiconductors (AOSs) are non-crystalline compounds composed of
metal elements and oxygen elements, possessing distinctive electrical properties. Even in …

Solution-based metal oxide semiconductors (MOSs) have emerged, with their potential for
low-cost and low-temperature processability preserving their intrinsic properties of high …

Metal-oxide semiconductors are considered promising alternative materials in the field of flat
panel display industry due to their advantages, such as high mobility, transparency …

Thin-film electronics fabricated with amorphous oxide semiconductors (AOS) are being
studied for beyond-display technologies because of their superior electron transport. To …

Bias temperature stress stabilities of thin-film transistors (TFTs) using In–Ga–Zn–O (IGZO)
channels prepared by the atomic layer deposition process were investigated with varying …

The presence of low‐frequency noise (LFN) in amorphous oxide semiconductor (AOS) thin‐
film transistors (TFTs) is of utmost concern, prompting extensive investigations into the …

Cationic compositional effects of amorphous In–Ga–Zn–O (a-IGZO) prepared by atomic
layer deposition (ALD) were strategically investigated for thin film transistor applications. The …

The reduction in current ability accompanied by the hump phenomenon in oxide
semiconductor thin-film transistors to which high DC voltages and AC drive voltages are …

A positive-gate-bias stress (PBS)-induced hump phenomenon in staggered bottom-gate
amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) is observed, and …

Amorphous InGaZnO thin film transistors (a-IGZO TFTs) with an etching-stop layer (ESL)
exhibit an anomalous negative shift of threshold voltage (V th) under positive bias …