DC ANALYSIS OF pnpn TUNNELING FIELD-EFFECT TRANSISTOR BASED ON In0.35Ga0.65As.
B Dorostkar, S Marjani - Holos, 2018 - search.ebscohost.com
Using calibrated simulations, we report the In< sub> 0.35 Ga< sub> 0.65 As based tunnel
field-effect transistor (TFET) with thin δ-doped n< sup>+ pocket at the source-channel …
field-effect transistor (TFET) with thin δ-doped n< sup>+ pocket at the source-channel …
[HTML][HTML] Stability Performance of a Quantum Square-shaped Extended Source PNPN TFET with Silicon Carbide Substrate by Means of a Physics-Based Analytical …
M Sabaghi - Tecciencia, 2020 - scielo.org.co
In this paper, an analytical stability model for quantum square-shaped extended source
PNPN tunneling field-effect transistor (PNPN TFET) with silicon carbide substrate is …
PNPN tunneling field-effect transistor (PNPN TFET) with silicon carbide substrate is …
An Accurate Subthreshold Analytical Model for Black Phosphorus Heterojunction Dopingless Tunneling Field-Effect Transistors
S Marjani, MT Khayami - 2021 29th Iranian Conference on …, 2021 - ieeexplore.ieee.org
This paper presents an accurate subthreshold analytical model for black phosphorus
heterojunction dopingless tunneling field-effect transistors (HD-TFET). At first, the center …
heterojunction dopingless tunneling field-effect transistors (HD-TFET). At first, the center …
Desempeno de Estabilidad de una Fuente Cuantica Cuadrada Extendida PNPN TFET con Sustrato de Carburo de Silicio Mediante un Modelo Analitico Fisico.
M Sabaghi - Tecciencia, 2020 - go.gale.com
En este documento, se desarrolla un odelo de estabilidad analítica para el transistor de
efecto de campo de túnel PNPN de fuente extendida cuántica de forma cuadrada (PNPN …
efecto de campo de túnel PNPN de fuente extendida cuántica de forma cuadrada (PNPN …
[PDF][PDF] Novel Quantum Structure of an III-V Tunneling Field-Effect Transistor with Source and Channel Heterojunction
M Sabaghi - HOLOS, 2020 - pdfs.semanticscholar.org
In this work, an III-V tunneling field-effect transistor (TFET) with source and channel
heterojunctions is proposed and introduced. Proposed structure combine the high tunneling …
heterojunctions is proposed and introduced. Proposed structure combine the high tunneling …
[PDF][PDF] Analysis of Silicon Carbide Polymorphs Substrates Effect on Performances of AlGaN/GaN Double Quantum Well HEMTs
M Sabaghi - HOLOS, 2019 - pdfs.semanticscholar.org
AlGaN/GaN high electron mobility transistors (HEMTs) have established terrific features in
the high-power and high-frequency applications of microwave device. In this paper, the …
the high-power and high-frequency applications of microwave device. In this paper, the …