Seventy-five years since the point-contact transistor: Germanium revisited
EN Sgourou, A Daskalopulu, LH Tsoukalas… - Applied Sciences, 2022 - mdpi.com
The advent of the point-contact transistor is one of the most significant technological
achievements in human history with a profound impact on human civilization during the past …
achievements in human history with a profound impact on human civilization during the past …
Modelling the Defect Processes of Materials for Energy Applications
EN Sgourou, A Daskalopulu, I Goulatis… - Applied Sciences, 2022 - mdpi.com
The technological requirement for ever more efficient materials for the energy and
electronics sectors has led to the consideration of numerous compositionally and structurally …
electronics sectors has led to the consideration of numerous compositionally and structurally …
Trivalent Atom Defect-Complex Induced Defect Levels in Germanium for Enhanced Ge‑Based Device Performance
Defect complexes have a significant impact on the structural, electronic, optical and
electrical properties of semiconductors. Several defect complexes formed by n-type and p …
electrical properties of semiconductors. Several defect complexes formed by n-type and p …
[HTML][HTML] Vacancy defects in nitrogen doped diamond
N Kuganathan, A Chroneos, RW Grimes - Physica B: Condensed Matter, 2023 - Elsevier
The introduction of nitrogen-vacancy (N–V) defects in diamond is important as they have
impact on the optical and electronic properties of diamond-based devices. Here, spin …
impact on the optical and electronic properties of diamond-based devices. Here, spin …
Exploring defect engineering in monolayer TiS3 for next-generation electronic devices: Insights from first-principles study
Titanium trisulfide monolayer (TiS 3) is a quasi-1D crystal with promising applications in a
range of fields, including photoelectrochemical cells and thermoelectrics. Despite the …
range of fields, including photoelectrochemical cells and thermoelectrics. Despite the …
Complex defects in Al0.5Ga0.5N by first principles calculations
L Zhang, Y Ye, J Zhou, Z Gan, L Cao, X Li - Molecular Physics, 2024 - Taylor & Francis
The complex native point defects in Al0. 5Ga0. 5N are studied by density functional theory
(DFT) and Heyd, Scuseria and Ernzerhof (HSE) hybrid functional. The lower formation …
(DFT) and Heyd, Scuseria and Ernzerhof (HSE) hybrid functional. The lower formation …
Donor-induced electrically charged defect levels: examining the role of indium and n-type defect-complexes in germanium
E Igumbor - Journal of Computational Electronics, 2024 - Springer
Defect levels induced by defect-complexes in Ge play important roles in device fabrication,
characterization, and processing. However, only a few defect levels induced by defect …
characterization, and processing. However, only a few defect levels induced by defect …