A convenient and effective method to deposit low-defect-density nc-Si: H thin film by PECVD
Y Wang, H Liu, W Shen - Nanoscale research letters, 2018 - Springer
Hydrogenated nanocrystalline silicon (nc-Si: H) thin film has received a great deal of
attention as a promising material for flat panel display transistors, solar cells, etc. However …
attention as a promising material for flat panel display transistors, solar cells, etc. However …
Hydrogen effect on structural and optical properties of in-situ fabricated nc-Si: H prepared by facing targets sputtering
L Meng, H Cheng, S Liu, Y Wu, D Li, J Fu… - Journal of Non …, 2022 - Elsevier
We report high-quality hydrogenated nanocrystalline silicon (nc-Si: H) thin films were
prepared by facing targets sputtering (FTS) in the environment of Ar and H 2 mixture gases …
prepared by facing targets sputtering (FTS) in the environment of Ar and H 2 mixture gases …
Amorphous and nanocrystalline silicon made by varying deposition pressure in PECVD process
Silicon thin films are deposited using plasma enhanced chemical vapor deposition (PECVD)
of silane, argon, hydrogen mixture at various pressures in the range of 2–8Torr. Raman …
of silane, argon, hydrogen mixture at various pressures in the range of 2–8Torr. Raman …
Origin of photoluminescence in nanocrystalline Si: H films
AM Ali - Journal of luminescence, 2007 - Elsevier
We have studied the origin of photoluminescence (PL) from hydrogenated nanocrystalline
silicon (nc-Si: H) films produced by a plasma-enhanced chemical vapor deposition …
silicon (nc-Si: H) films produced by a plasma-enhanced chemical vapor deposition …
Effect of substrate temperature on microstructure and optical properties of hydrogenated nanocrystalline Si thin films grown by plasma enhanced chemical vapor …
In this paper is presented the effect of substrate temperature (T s) on the chemical
composition, the morphology, the reflectivity and the carrier life time of hydrogenated …
composition, the morphology, the reflectivity and the carrier life time of hydrogenated …
Morphological and Electrical Features of Porous Silicon Prepared by Metal-Induced Chemical Etching
Porous silicon (PS) was produced by the metal-induced chemical etching of p-type Si
wafers. Patterned platinum dots (~ 300 μm) were deposited on a Si wafer by DC magnetron …
wafers. Patterned platinum dots (~ 300 μm) were deposited on a Si wafer by DC magnetron …
Nanostructure, electrical and optical properties of p-type hydrogenated nanocrystalline silicon films
L Guo, J Ding, J Yang, Z Ling, G Cheng, N Yuan… - Vacuum, 2011 - Elsevier
In this paper, p-type hydrogenated nanocrystalline (nc-Si: H) films were prepared on corning
7059 glass by plasma-enhanced chemical vapor deposition (PECVD) system. The films …
7059 glass by plasma-enhanced chemical vapor deposition (PECVD) system. The films …
Measurement of nc-Si: H film uniformity and diagnosis of plasma spatial structure produced by a very high frequency, differentially powered, multi-tile plasma source
This paper presents the characterization of a very high frequency, differentially powered,
capacitively coupled, multi-tile plasma source, MAMELUKE. Specifically, this work …
capacitively coupled, multi-tile plasma source, MAMELUKE. Specifically, this work …
Nanostructural and optical features of hydrogenated nanocrystalline silicon films prepared by aluminium-induced crystallization
A 30-nm-thick Al layer was deposited on top of the hydrogenated amorphous silicon films by
radio frequency magnetron sputter, and then heat-treatments were carried out at …
radio frequency magnetron sputter, and then heat-treatments were carried out at …
Thermal post-deposition treatment effects on nanocrystalline hydrogenated silicon prepared by PECVD under different hydrogen flow rates
In this paper, hydrogenated nanocrystalline silicon (nc-Si: H) thin films were deposited on
mono-crystalline silicon substrate by plasma enhanced chemical vapor deposition (PECVD) …
mono-crystalline silicon substrate by plasma enhanced chemical vapor deposition (PECVD) …