The third generation wide bandgap (WBG) semiconductor materials exhibit a prominent role
in various applications such as adapters, uninterrupted power supplies, smart grids, and …

Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to
facilitate economic growth in a semiconductor industry that is silicon-based and currently …

This work presents a new device concept, the Multi-Channel Monolithic-Cascode high-
electron-mobility transistor (MC 2-HEMT), which monolithically integrates a low-voltage …

Because of trapped charges in GaN transistor structure, device dynamic on-state resistance
R_DSon is increased when it is operated in high frequency switched power converters, in …

In this article, Si (100) inks' array is integrated on SiN/AlGaN/GaN substrate to demonstrate a
zero deviation and wafer-scale Si-GaN monolithic integration by transfer printing and self …

With the high-frequency, low power dissipation and high-efficiency characteristics, Gallium
nitride (GaN) power devices are of significant benefits to design high-speed motor drives in …

In this paper, a P-type GaN buried layer is introduced into the buffer layer of AlGaN/GaN
HEMTs, and the effect of the P-type GaN buried layer on the device's temperature …

The energy is one of the main infrastructures for human life and industries. Therefore, many
studies have been investigated on energy resources, and especially, lots of renewable …

In this work, simulation-based research work based on a novel All-GaN-Integrated Cascode
(AGC) MISHEMT with quaternary layer In y Al x Ga 1-xy N as backbarrier has been …

We present the first principle calculations of the electrical properties of graphene sheet/h-BN
heterojunction (GS/h-BN) and 11-armchair graphene nanoribbon/h-BN heterojunction (11 …