Atomic layer deposition (ALD) has become an indispensable thin-film technology in the
contemporary microelectronics industry. The unique self-limited layer-by-layer growth …

Dynamic random access memories (DRAMs) are currently used as the core memory in
computing systems because of their high speed and density. Their demand should continue …

The atomic layer deposition (ALD) of Ru using a metal–organic precursor, tricarbonyl
(trimethylenemethane) ruthenium [Ru (TMM)(CO) 3] and O2 as a reactant is reported. The …

Patterning below 10 nm with conventional techniques such as Litho-etch (LE*), a subtractive
self-aligned multiple patterning process, suffers from limitations due to edge placement …

Herein, low-resistivity Ru metal films were fabricated via atomic layer deposition (ALD) using
dicarbonyl-bis (5-methyl-2, 4-hexanediketonato) Ru (II) and O 2 as the Ru precursor and co …

Thin films of elemental metals play a very important role in modern electronic nano-devices
as conduction pathways, spacer layers, spin-current generators/detectors, and many other …

Ruthenium (Ru) has been suggested as one of the promising materials for nanoscale
interconnects to substitute copper (Cu) that is currently used in the semiconductor industry …

Ru films are grown on Pt, TiN, and SiO2 substrates via atomic layer deposition (ALD) using
Ru (II)(η5‐C7H7O)(η5‐C7H9) as the novel Ru metalorganic precursor and O2 as the …

As the unique nanofabrication technique, atomic layer deposition (ALD) can be used to
deposit high-quality, uniform, and conformal nanoparticle coatings. Ru and its oxides (RuO …

A method to eliminate an oxide layer formed on landing pad during the atomic layer
deposition (ALD) of Ruthenium (Ru) was investigated with post-deposition annealing (PDA) …