Third generation photovoltaics

GF Brown, J Wu - Laser & Photonics Reviews, 2009 - Wiley Online Library
We review recent progress towards increasing solar cell efficiencies beyond the Shockley‐
Queisser efficiency limit. Four main approaches are highlighted: multi‐junction cells …

Exceeding the Shockley–Queisser limit in solar energy conversion

CA Nelson, NR Monahan, XY Zhu - Energy & Environmental Science, 2013 - pubs.rsc.org
We summarize our recent explorations of photophysical mechanisms that may be utilized in
solar cells with power conversion efficiency theoretically exceeding the Shockley–Queisser …

Silicon nanoscale materials: From theoretical simulations to photonic applications

L Khriachtchev, S Ossicini, F Iacona… - International Journal …, 2012 - Wiley Online Library
The combination of photonics and silicon technology is a great challenge because of the
potentiality of coupling electronics and optical functions on a single chip. Silicon …

Impact ionization by hot carriers in a black phosphorus field effect transistor

F Ahmed, YD Kim, Z Yang, P He, E Hwang… - Nature …, 2018 - nature.com
The strong Coulombic interactions in miniaturized structures can lead to efficient carrier
multiplication, which is essential for many-body physics and design of efficient photonic …

Direct characterization of nanocrystal size distribution using Raman spectroscopy

İ Doğan, M van de Sanden - Journal of Applied Physics, 2013 - pubs.aip.org
We report a rigorous analytical approach based on one-particle phonon confinement model
to realize direct detection of nanocrystal size distribution and volume fraction by using …

Carrier multiplication in bulk and nanocrystalline semiconductors: Mechanism, efficiency, and interest for solar cells

C Delerue, G Allan, JJH Pijpers, M Bonn - Physical Review B—Condensed …, 2010 - APS
Carrier multiplication (CM), the possibility to generate more than one exciton in a
semiconductor quantum dot (QD) after absorption of a single photon has been intensely …

Detection of nitroaromatics in the solid, solution, and vapor phases using silicon quantum dot sensors

A Nguyen, CM Gonzalez, R Sinelnikov… - …, 2016 - iopscience.iop.org
Abstract Silicon quantum dots (Si-QDs) represent a well-known QD fluorophore that can emit
throughout the visible spectrum depending on the interface structure and surface functional …

Fast relaxation of hot carriers by impact ionization in semiconductor nanocrystals: Role of defects

G Allan, C Delerue - Physical Review B—Condensed Matter and Materials …, 2009 - APS
We present calculations predicting that defects at the surface of semiconductor nanocrystals
have a strong influence on the dynamics of hot carriers after photoexcitation. The relaxation …

Experimental investigations and modeling of Auger recombination in silicon nanocrystals

MT Trinh, R Limpens… - The Journal of Physical …, 2013 - ACS Publications
The Auger process provides one of the most important nonradiative recombination channels
in semiconductors and strongly enhances in nanostructures. In this paper, we investigate …

Tuning optical properties of Ge nanocrystals by Si shell

MO Nestoklon, AN Poddubny, P Voisin… - The Journal of …, 2016 - ACS Publications
We present a theoretical study of Ge-core/Si-shell nanocrystals in a wide bandgap matrix
and compare the results with experimental data obtained from the samples prepared by co …