The performance of III‐nitride devices is degraded by polarization in a wurtzite crystal
structure. Nonpolar and semipolar III‐nitrides have been extensively studied since the early …

The electrical and optical improvements of AlGaInP micro-light-emitting diodes (µLEDs)
using atomic-layer deposition (ALD) sidewall passivation were demonstrated. Due to the …

LEDs based on planar InGaN/GaN heterostructures define an important standard for solid-
state lighting. However, one drawback is the polarization field of the wurtzite heterostructure …

The integration of gallium nitride (GaN) nanowire light-emitting diodes (nanoLEDs) on
flexible substrates offers opportunities for applications beyond rigid solid-state lighting (eg …

We present the first demonstration of RF characteristics of electrically injected GaN/InGaN
core–shell nanowire-based micro light-emitting diodes (μLEDs) for μLED displays and …

GaN nanostructures hold significant promise in advancing nanoscale light‐emitting devices.
However, significant progress remains elusive, possibly due to the absence of innovative …

Multi-wavelength visible light emitters play a crucial role in current solid-state lighting.
Although they can be realized by combining semiconductor light-emitting diodes (LEDs) and …

Integration of one-dimensional (1D) semiconductors with two-dimensional (2D) materials
into hybrid systems is identified as promising applications for new optoelectronic and …

Multi-color emission from coaxial GaInN/GaN multiple-quantum-shell (MQS) nanowire-
based light-emitting diodes (LEDs) was identified. In this study, MQS nanowire samples for …

We fabricated InGaN quantum wells on GaN microlens structures by employing a thermal
reflow method. The peak emission wavelengths shift from∼ 490 nm on the top of the …