A 0.02–4.5-GHz LN (T) A in 28-nm CMOS for 5G exploiting noise reduction and current reuse
A Bozorg, RB Staszewski - IEEE Journal of Solid-State Circuits, 2020 - ieeexplore.ieee.org
In this article, a new noise reduction/cancellation technique is proposed to improve noise
figure (NF) of a broadband low-noise transconductance amplifier (LNTA) for 5G receivers …
figure (NF) of a broadband low-noise transconductance amplifier (LNTA) for 5G receivers …
A 0.096-mm –20-GHz Triple-Path Noise- Canceling Common-Gate Common-Source LNA With Dual Complementary pMOS–nMOS Configuration
This article proposes a novel wideband commongate (CG) common-source (CS) low-noise
amplifier (LNA) with a dual complementary pMOS-nMOS configuration to provide a current …
amplifier (LNA) with a dual complementary pMOS-nMOS configuration to provide a current …
A compact 0.3-V class AB bulk-driven OTA
In this article, a new solution for an ultralow-voltage (ULV) ultralow-power (ULP) operational
transconductance amplifier (OTA) is presented. Thanks to the combination of a low-voltage …
transconductance amplifier (OTA) is presented. Thanks to the combination of a low-voltage …
A wideband 2–5 GHz noise canceling subthreshold low noise amplifier
This brief presents an energy efficient wideband low noise amplifier (LNA) operating in
subthreshold regime. Wideband matching and low noise figure in subthreshold domain is …
subthreshold regime. Wideband matching and low noise figure in subthreshold domain is …
Near-Threshold Wide-Voltage Design Review
Y Zhao, J Yang, C Chen, W Shan, P Cao… - Tsinghua Science …, 2023 - ieeexplore.ieee.org
This paper presents a comprehensive review of near-threshold wide-voltage designs on
memory, resilient logic designs, low voltage Radio Frequency (RF) circuits, and timing …
memory, resilient logic designs, low voltage Radio Frequency (RF) circuits, and timing …
Performance analysis of metal gate engineered junctionless nanosheet fet with a ft/fmax of 224/342ghz for beyond 5g (b5g) applications
This manuscript for the first time investigates the effect of Dual Metal on Gate Junctionless
Nanosheet FET (DMG-JL-NSFET) for analog/RF applications. The entire analysis is …
Nanosheet FET (DMG-JL-NSFET) for analog/RF applications. The entire analysis is …
Design of low-power sub-2.4 dB mean NF 5G LNAs using forward body bias in 22 nm FDSOI
O El-Aassar, GM Rebeiz - IEEE Transactions on Microwave …, 2020 - ieeexplore.ieee.org
This article presents K/Ka-band low-noise-amplifiers (LNAs) for 5G front ends. The use of
forward body bias (FBB) in fully depleted silicon-on-insulator (FDSOI) devices is studied and …
forward body bias (FBB) in fully depleted silicon-on-insulator (FDSOI) devices is studied and …
Wideband Inductorless Low-Power LNAs with Gm Enhancement and Noise-Cancellation
Z Pan, C Qin, Z Ye, Y Wang, Z Yu - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
Two inductorless low-power differential low-noise amplifiers (LNAs) are designed for
multiband wireless communication applications. Both LNAs are based on the combination of …
multiband wireless communication applications. Both LNAs are based on the combination of …
Design and Analysis of 2.4 GHz CMOS LNAs for Wearable WSN Applications
E Kargaran, D Manstretta… - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
To meet the requirements of wearable wireless sensor networks, the power dissipation of
the RF transceiver has to be drastically reduced. This paper presents two ultralow power low …
the RF transceiver has to be drastically reduced. This paper presents two ultralow power low …
A Low Power Inductorless Wideband LNA With Gm Enhancement and Noise Cancellation
Z Pan, C Qin, Z Ye, Y Wang - IEEE microwave and wireless …, 2016 - ieeexplore.ieee.org
This letter presents the design of an inductorless low power differential low-noise amplifier
(LNA) in 65 nm Low Power (LP) CMOS technology for multi-standard radio applications …
(LNA) in 65 nm Low Power (LP) CMOS technology for multi-standard radio applications …