R Munekata, T Uchimura, H Araki, A Kanai, K Tanaka… - Materials, 2023 - mdpi.com
Ag8SnS6 (ATS) has been reported to have a band gap of 1.33 eV and is expected to be a suitable material for the light-absorbing layers of compound thin-film solar cells. However …
A facile spray pyrolysis processing of ternary Cu 2 SnS 3 and Cu 2 Sn 1− x Ge x S 3 absorbers is presented. The Cu 2 SnS 3 and Cu 2 Sn 1− x Ge x S 3 thin films were sprayed …
Abstract CTS (Cu 2 SnS 3) can be used in the next generation of thin-film solar cells due to its non-toxicity, affordability, and natural availability. CTS has a direct bandgap, high …
K Fareh, M Oubakalla, M Beraich, M Lharch… - Physica B: Condensed …, 2024 - Elsevier
This study highlights our optimization of the co-electrodeposition duration of Cu, Sn, and S on the titanium substrate in order to further improve the properties of Cu 2 SnS 3 thin films in …
Designing effective strategies for mitigating energy crisis highlights a research gap in current solar cell technologies. This study explores the inherent physicochemical properties of thin …
The fabrication of metal oxide semiconductor heterostructures is a major way to enhance their properties in photocatalytic and antibacterial applications. In the present work, ZnO/α …
The non-toxic, earth-abundant, and environmentally safe features of Cu2SnS3 (CTS) make it promising for diverse applications, including photovoltaic absorber layers and …
X Xu, S Wang, Y Chen, N Yu, Z Zhou, Y Ma - Vacuum, 2024 - Elsevier
Abstract Cu 2 Sn 1-x Ge x S 3 (CTGS) thin films were created through sulfurizing SnGe/Cu precursors deposited by the sputtering method. The effects of different sulfurization …