The behavior of silicon carbide (SiC) power MOSFETs under stressful short-circuit (SC)
conditions is investigated in this paper. Two different SC failure phenomena for SiC power …

This paper presents a comprehensive short-circuit ruggedness evaluation and numerical
investigation of up-to-date commercial silicon carbide (SiC) MOSFETs. The short-circuit …

Carrier mobility is at the root of our understanding of electronic devices. We present a unified
methodology for the parameter-free calculations of phonon-limited drift and Hall carrier …

Two-dimensional monolayer titanium carbide (TiC 3) was used to study as a suitable
electrode material for lithium-ion batteries with first principles calculation. The monolayer TiC …

Simple analytical approximation has been obtained to describe the temperature and
concentration dependencies of the low-field mobility in gallium nitride (GaN) in wide …

Silicon carbide (SiC) is a wide bandgap third‐generation semiconductor well suited for
harsh environment power electronics, micro and nano electromechanical systems, and …

After many years of research and development, silicon carbide has emerged as one of the
most important wide band gap semiconductors. The first commercial SiC devices? power …

The switching transient properties from the switching power semiconductor gate side are
sensitive to the device's junction temperature (T j). Real-time T j sensing methods based on …

Transparent p‐type polycrystalline CuI films with high hole mobility are produced by solid
iodination of Cu3N precursor layers and subsequent heat treatment at 120° C. The hole …

A broken-gap heterojunction is a bright approach for designing tunneling field-effect
transistors (TFETs) due to its distinct quantum tunneling mechanisms. In this study, we …