Investigation of growth characteristics, compositions, and properties of atomic layer deposited amorphous Zn-doped Ga2O3 films
J Tao, HL Lu, Y Gu, HP Ma, X Li, JX Chen, WJ Liu… - Applied Surface …, 2019 - Elsevier
Diethylzinc and H 2 O were used as the precursors for the thermal atomic layer deposition
(TH-ALD) of ZnO deposition while the trimethylgallium and O 2 plasma were used as a …
(TH-ALD) of ZnO deposition while the trimethylgallium and O 2 plasma were used as a …
Exploration of chemical composition of In–Ga–Zn–O system via PEALD technique for optimal physical and electrical properties
Abstract In–Ga–Zn–O (IGZO) material has been researched due to its favorable electrical
characteristics for application in thin‐film transistor (TFT) applications such as low off current …
characteristics for application in thin‐film transistor (TFT) applications such as low off current …
Breaking the elastic limit of piezoelectric ceramics using nanostructures: A case study using ZnO
Piezoelectric materials are suitable for haptic technology as they can convert mechanical
stimuli into electrical signals and vice-versa. However, owing to their disadvantageous …
stimuli into electrical signals and vice-versa. However, owing to their disadvantageous …
Cobalt metal ALD: Understanding the mechanism and role of zinc alkyl precursors as reductants for low-resistivity Co thin films
In this work, we report a new and promising approach toward the atomic layer deposition
(ALD) of metallic Co thin films. Utilizing the simple and known CoCl2 (TMEDA)(TMEDA= N …
(ALD) of metallic Co thin films. Utilizing the simple and known CoCl2 (TMEDA)(TMEDA= N …
[HTML][HTML] Tuning of material properties of ZnO thin films grown by plasma-enhanced atomic layer deposition at room temperature
The ability to grow inorganic thin films with highly controllable structural and optical
properties at low substrate temperature enables the manufacturing of functional devices on …
properties at low substrate temperature enables the manufacturing of functional devices on …
From precursor chemistry to gas sensors: Plasma‐enhanced atomic layer deposition process engineering for zinc oxide layers from a nonpyrophoric zinc precursor for …
Abstract The identification of bis‐3‐(N, N‐dimethylamino) propyl zinc ([Zn (DMP) 2], BDMPZ)
as a safe and potential alternative to the highly pyrophoric diethyl zinc (DEZ) as atomic layer …
as a safe and potential alternative to the highly pyrophoric diethyl zinc (DEZ) as atomic layer …
Low-temperature ALD/MLD growth of alucone and zincone thin films from non-pyrophoric precursors
The combined atomic/molecular layer deposition (ALD/MLD) technique is emerging as a
state-of-the-art synthesis route for new metal–organic thin-film materials with a multitude of …
state-of-the-art synthesis route for new metal–organic thin-film materials with a multitude of …
Surface reaction kinetics in atomic layer deposition: An analytical model and experiments
T Muneshwar, K Cadien - Journal of Applied Physics, 2018 - pubs.aip.org
Atomic layer deposition (ALD) surface reactions are comprised of several elementary
surface interactions (such as physisorption, desorption, and chemisorption) occurring at the …
surface interactions (such as physisorption, desorption, and chemisorption) occurring at the …
ZnO Thin Films Grown by Plasma‐Enhanced Atomic Layer Deposition: Material Properties Within and Outside the “Atomic Layer Deposition Window”
J Pilz, A Perrotta, G Leising… - physica status solidi (a …, 2020 - Wiley Online Library
ZnO thin films and nanostructures are applied in various devices due to their interesting
optical and electrical properties. Atomic layer deposition (ALD) of ZnO offers unique …
optical and electrical properties. Atomic layer deposition (ALD) of ZnO offers unique …
Atomic layer deposition: Fundamentals, practice, and challenges
T Muneshwar, M Miao, ER Borujeny… - Handbook of thin film …, 2018 - Elsevier
Atomic layer deposition (ALD) for thin film deposition is one of the most important techniques
that is enabling the continuous miniaturization of semiconductor devices. ALD film growth is …
that is enabling the continuous miniaturization of semiconductor devices. ALD film growth is …