The ever‐increasing power density and operation frequency in electrical power conversion
systems require the development of power devices that can outperform conventional Si …

The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has
the potential to deliver high power and high frequency with performances surpassing …

Normally-off AlGaN/GaN MIS-HEMTs with a high threshold voltage () more than 2.5 V and a
low on-resistance of mm have been achieved by an improved regrowth technique with in …

In this work, the DC performance and RF characteristics of GaN-based high-electron-
mobility transistors (HEMTs) using the SiNx stress-engineered technique were …

In this work, a dramatic reduction in current collapse is achieved in GaN-based high-electron-
mobility transistors (HEMTs) using dual-layer SiN x stressor passivation (DSSP), and the …

We have developed a generalized numerical model for gate leakage current (IG) in normally
off pGaN/AlGaN/GaN high electron mobility transistors. Across all devices, leakage primarily …

In this study, a new robust ohmic contact preparation process for GaN p-FETs application is
developed on p-GaN/AlGaN/GaN, which excluded the commonly used descum step. A …

In this work, we present the novel application of SiNx stress-engineering techniques for the
suppression of short-channel effects in AlGaN/GaN high-electron-mobility transistors …

In this work, we report an improvement in the device's threshold voltage, off-state voltage
handling capability, and dynamic ON resistance behavior with stress engineering in the …