The ensemble emission spectra of colloidal InP quantum dots are broader than achievable
spectra of cadmium-and lead-based quantum dots, despite similar single-particle line widths …

Abstract InP/ZnSe/ZnS quantum dots (QDs) stand as promising candidates for advancing
QD-organic light-emitting diodes (QLED), but low emission efficiency due to their …

Semiconducting nanomaterials synthesized using wet chemical techniques play an
important role in emerging optoelectronic and photonic technologies. Controlling the surface …

Surface modification and ablation of crystalline indium phosphide was performed with single
and double 130fs pulses from a Ti: sapphire laser. The morphological features resulting from …

The radiation hardness of as-grown and electrochemically nanostructured GaN epilayers
against heavy ion irradiation was studied by means of photoluminescence (PL) and …

Using a field emission gun based scanning electron microscopy, we report the formation of
nanodots on the InP surfaces after bombardment by 100keV Ar+ ions under off-normal ion …

Uniform radial flow epitaxy, a novel growth technique, has been used to grow InGaAs films
on InP. Epitaxial layers above and below the critical thickness for the onset of slip were …

Laser ablation of single-crystalline indium phosphide (InP) was performed in air by means of
linearly polarized Ti: sapphire femtosecond pulses (800 nm, 130 fs, 10 Hz). As a result of the …

Raman spectroscopy is well-suited for the characterization of semiconductor materials.
However, due the weakness of the Raman signal, the studies of thin semiconductor layers in …

We present resonant UV Raman-scattering measurements on GaN epilayers implanted to
different doses of Be+ ions. The Raman spectra are dominated by outgoing multiphonon …