Effect of substrate temperature on properties of AlN buffer layer grown by remote plasma ALD
XY Zhang, DC Peng, J Han, FB Ren, SC Jiang… - Surfaces and …, 2023 - Elsevier
Aluminum nitride (AlN) thin film has considerable properties, which makes it advantages for
a variety of applications. AlN films were prepared by remote plasma atomic layer deposition …
a variety of applications. AlN films were prepared by remote plasma atomic layer deposition …
[HTML][HTML] Plasma power effect on crystallinity and density of AlN films deposited by plasma enhanced atomic layer deposition
XY Zhang, DC Peng, JH Yan, ZX Zhang… - Journal of Materials …, 2023 - Elsevier
Aluminum nitride (AlN) film is a promising material which is used in various fields. In this
study, AlN films with different plasma powers were grown by remote plasma atomic layer …
study, AlN films with different plasma powers were grown by remote plasma atomic layer …
Reaction of Hydrazine with Solution-and Vacuum-Prepared Selectively Terminated Si (100) Surfaces: Pathways to the Formation of Direct Si–N Bonds
The reactivity of liquid hydrazine (N2H4) with respect to H-, Cl-, and Br-terminated Si (100)
surfaces was investigated to uncover the principles of nitrogen incorporation into the …
surfaces was investigated to uncover the principles of nitrogen incorporation into the …
Accelerated oxygen evolution kinetics on Ir-doped SrTiO3 perovskite by NH3 plasma treatment
LL Deng, XP Ma, MT Lu, Y He, RL Fan… - Chinese Physics B, 2022 - iopscience.iop.org
Exploring low-cost and high-performance catalysts for oxygen evolution reaction (OER)
remains to be a great challenge. Iridium-based perovskite oxide has large potential in OER …
remains to be a great challenge. Iridium-based perovskite oxide has large potential in OER …
[图书][B] Monolayer Functionalization of Silicon and Metal Oxide Surfaces With Boron-and Nitrogen-Containing Precursors
D Silva-Quinones - 2024 - search.proquest.com
As the dimensions of electronic device components shrink, there is a growing need for
innovative methods and chemical modification strategies to fabricate nanometer-sized …
innovative methods and chemical modification strategies to fabricate nanometer-sized …
KrF Photoresist Profile Modulation by NH3 Plasma Treatment for 28 nm SRAM
RL Li, J Zhang, LL Wang… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
A novel substrate surface treatment by NH 3 plasma is introduced in KrF (248 nm)
lithography module for 28-nm SRAM with embedded SiGe source/drain. The surface …
lithography module for 28-nm SRAM with embedded SiGe source/drain. The surface …
Plasma Power Effect on Crystallinity and Density of Peald-Aln Thin Films: Toward Increasing Dielectric Constant and Breakdown Electric Field
XY Zhang, DC Peng, JH Yan, ZX Zhang… - Available at SSRN … - papers.ssrn.com
Aluminum nitride (AlN) film is a promising material which is used in various fields. In this
study, AlN films with different plasma powers were grown by remote plasma atomic layer …
study, AlN films with different plasma powers were grown by remote plasma atomic layer …