ZnO is a unique semiconductor that used for various applications. The preparation method,
crystal morphology and particle size have important role in its physical properties. This …

Highlights•A critical analysis of the status of p-type doping of ZnO is presented.•The
performance of ZnO-based light-emitting diodes is reviewed.•The role of defects and self …

Zinc oxide (ZnO) is a compound semiconductor with a direct band gap and high exciton
binding energy. The unique property, ie, high efficient light emission at ultraviolet band …

This paper reviews the recent progress in acceptor doping of ZnO that has been achieved
with a focus toward the optimum strategy. There are three main approaches for generating p …

Today, ab-initio calculations are becoming a powerful tool to perform virtual experiments that
have the capacity to predict and to reproduce experimentally observed non-periodic …

Abstract Undoped Zinc oxide (ZnO) and Antimony doped Zinc Oxide (Sb: ZnO)
nanostructures (nanocones and nanoflakes) with different doping concentrations of Sb (3 …

We demonstrate that Zn (Mg) O: Ga layers can be grown by molecular beam epitaxy in a two-
dimensional mode with high structural perfection up to Ga mole fractions of about 6.5%. The …

Despite the lack of reproducible experimental confirmation, group-V elements have been
considered as possible sources of p-type doping in ZnO in the form of simple and complex …

Hot-electron energy relaxation time is deduced for Ga-doped ZnO epitaxial layers from
pulsed hot-electron noise measurements at room temperature. The relaxation time …

Sb-doped ZnO films were fabricated on c-plane sapphire using the pulsed laser deposition
method and characterized by Hall effect measurement, X-ray photoelectron spectroscopy, X …