Nano Cd 1− x Y x S and Cd 1− x V x S (0≤ x≤ 0.2) systems were synthesized by a
thermolysis method. X-ray phase analysis indicated the presence of two phases, cubic and …

First-principles calculations have been carried out to investigate the optoelectronic and
magnetic of Ga 1-x V x N (x​=​ 0, 0.027, 0.0625 and 0.125). Our results demonstrate that V …

Using the first-principles method based on the density functional theory, we have studied
magnetic and optical properties of V-doped GaN. For 12.5% V-doped GaN, total energy …

Al x Ga 1− x N/GaN hetero-structures were grown on SiN-treated (00.1) sapphire substrate
by atmospheric pressure metalorganic vapor phase epitaxy (AP-MOVPE). Characterization …

Using the first-principles method based on the density functional theory, we study electronic
and magnetic properties of GaN doped with 6.25% of V. The V dopants are found spin …

We carried out first-principles spin-polarized calculations in order to study the adsorption
and diffusion of 3d transition metal (TM= Ti, V, Cr, Mn, Fe, Co, and Ni) atoms on a GaN …

First principles total energy calculations have been performed to investigate the initial stages
of the Sc adsorption and ScN thin film formation on the GaN (000-1)-(2× 2) surface. Studies …

Using first principles total energy calculations we have investigated the initial stages of the
adsorption of Sc and ScN thin films on GaN (0001) surfaces under both N and Ga rich …

V-doped GaN epitaxial thin films were grown by Metal Organic Chemical Vapor Deposition
(MOCVD) on c-plane sapphire substrate. Structure, surface morphology, gap energy …

In this work, we have prepared undoped and vanadium doped ZnO nanopowders by sol–gel
method. The treated powder at 500° C has an average particle size of 25 nm. Pellets have …