Superjunction (SJ) is one of the most innovative concepts in the field of power
semiconductor devices and is often referred to as a" milestone" in power MOS. Its balanced …

We report the first experimental demonstration of a vertical superjunction device in GaN. P-
type nickel oxide (NiO) is sputtered conformally in 6μm deep n-GaN trenches. Sputter recipe …

This work demonstrates vertical GaN superjunction (SJ) diodes fabricated via a novel self-
aligned process. The SJ comprises n-GaN pillars wrapped by the charge-balanced p-type …

This article reports on two generations of GaN-on-sapphire super-heterojunction (SHJ)
transistors, aiming at the realization of 10-kV class power transistors with low static and …

Super junctions (SJs) have enabled unprecedented performance in Silicon power devices,
which could be further improved by applying this concept to wide bandgap semiconductors …

The superjunction (SJ), historically a silicon technology, has emerged as an effective
method to increase blocking voltage with reduced ON-resistance. A previous report of …

In this letter, we demonstrate high-performance lateral AlGaN/GaN hybrid anode diodes
(HADs) with p-GaN stripe array gate (PSAG) structure with much reduced turn-on voltage () …

This letter reports the first controlled experimental study on the impact of charge-balance on
static and dynamic characteristics of GaN super-heterojunction Schottky barrier diodes (SHJ …

Superjunction (SJ) breaks the performance limit of conventional power devices via
multidimensional electrostatic engineering. Following a commercial success in Si, it has …

Physics-based 3D simulations were conducted on a GaN high-electron-mobility transistor
(HEMT) and a super-heterojunction field-effect transistor (SHJFET) to investigate the single …