Paper including semiconductor device and manufacturing method thereof

Y Dozen, T Aoki, H Takahashi, D Yamada… - US Patent …, 2012 - Google Patents
Paper embedded with a semiconductor device capable of communicating wirelessly is
realized, whose unevenness of a portion including the semiconductor device does not stand …

Semiconductor device and manufacturing method of semiconductor device

Y Dozen, T Aoki, H Takahashi, D Yamada… - US Patent …, 2013 - Google Patents
B2 5/2007 B1* 11/2007 B2* 4, 2008 B2 4, 2008 B2 9, 2008 B2 11/2008 B2 11/2008 B2 12,
2008 B2 1/2009 B2 1/2009 B2 3, 2009 B2 T/2009 B2 T/2009 B2 9, 2009 B2 12/2009 B2 6 …

Laminate and method for separating the same

H Imai, K Tamura, A Kubo, T Yoshioka, Y Fujii… - US Patent …, 2016 - Google Patents
A laminate including a supporter which transmits infrared; a substrate supported by the
supporter; an adhesive layer via which the supporter and the substrate are attached to each …

Laminate and method for separating the same

Y Inao, Y Fujii, A Matsushita, K Tamura… - US Patent …, 2016 - Google Patents
A laminate including a supporting member which is light transmissive; a supported substrate
supported by the supporting member; an adhesive layer provided on a surface of the …

Semiconductor device and manufacturing method of semiconductor device

Y Dozen, T Aoki, H Takahashi, D Yamada… - US Patent …, 2011 - Google Patents
The present invention provides a thin and bendable semicon ductor device utilizing an
advantage of a flexible Substrate used in the semiconductor device, and a method of …

Semiconductor device and manufacturing method of semiconductor device

Y Dozen, T Aoki, H Takahashi, D Yamada… - US Patent …, 2014 - Google Patents
The present invention provides a thin and bendable semicon ductor device utilizing an
advantage of a flexible Substrate used in the semiconductor device, and a method of …

Wafer level stacked structures having integrated passive features

MF Aimi, JA Iannotti, JE Brewer - US Patent 11,854,958, 2023 - Google Patents
A method includes obtaining an active feature layer having a first surface bearing one or
more active feature areas. A first capacitor plate of a first capacitor is formed on an interior …

Metal-semiconductor wafer bonding for high-Q devices

C Yun, C Zuo, CS Lo, J Kim, MF Velez - US Patent 8,907,450, 2014 - Google Patents
BACKGROUND Conventional Metal-Insulator-Metal (MIM) devices, such as MIM
semiconductor capacitors, have quality factor (Q) limits due to resistance of thick metal …

Wafer level stacked structures having integrated passive features

MF Aimi, JA Iannotti, JE Brewer - US Patent 11,430,728, 2022 - Google Patents
A method includes obtaining an active feature layer having a first surface bearing one or
more active feature areas. A first capacitor plate of a first capacitor is formed on an interior …

Metal-semiconductor wafer bonding for high-Q devices

C Yun, C Zuo, CS Lo, J Kim, MF Velez - US Patent 9,431,510, 2016 - Google Patents
Methods and apparatus for metal semiconductor wafer bonding for high-Q devices are
provided. An exemplary capacitor includes a first plate formed on a glass Substrate, a …