Small-Signal Modeling of GaN-on-Diamond HEMT Using ANFIS Method

B Kadirbay, S Husain, M Hashmi - … International Symposium on …, 2023 - ieeexplore.ieee.org
This paper develops and demonstrates an accurate and effective approach for small-signal
modeling of Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) using Adaptive …

Comparison of ANFIS and ANN for Small-Signal Modelling of GaN HEMT up to 40 GHz

B Kadirbay, S Husain, A Jarndal… - 2023 International …, 2023 - ieeexplore.ieee.org
This paper compares the performance of the Adaptive Neuro-Fuzzy Interface System
(ANFIS) and Artificial Neural Network (ANN) by developing small-signal models for Gallium …

Artificial Intelligence-Based Modeling of Microwave GaN HEMT Power Dissipation

N Ismail, N Boulejfen - 2023 22nd Mediterranean Microwave …, 2023 - ieeexplore.ieee.org
The GaN HEMT power dissipation is modeled as function of the drain source voltage, the
gate source voltage, the drain quiescent bias voltage and the gate quiescent bias voltage in …