Thin film forming method
Y Kim, Y Kim - US Patent 12,025,484, 2024 - Google Patents
A thin film forming method includes: a first operation of supplying a source gas at a first flow
rate into a reactor; a second operation of purging the source gas in the reactor to an exhaust …
rate into a reactor; a second operation of purging the source gas in the reactor to an exhaust …
Method of forming an enhanced unexposed photoresist layer
JW Maes, KK Kachel, DK De Roest - US Patent 11,022,879, 2021 - Google Patents
The method relates to a method of forming an enhanced unexposed photoresist layer from
an unexposed photoresist layer on a substrate by increasing the sensitivity of the unexposed …
an unexposed photoresist layer on a substrate by increasing the sensitivity of the unexposed …
Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
2020-11-07 Assigned to ASM IP HOLDING BV reassignment ASM IP HOLDING BV
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors …
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors …
Method of selectively depositing a capping layer structure on a semiconductor device structure
A Kuroda, A Kobayashi, D Ishikawa - US Patent 10,910,262, 2021 - Google Patents
D142, 841 S 2,410,420 A 2,563,931 A 2,660,061 A 2,745,640 A 2,990,045 A 3,038,951 A
3,089,507 A 3,094,396 A 3,232,437 A 3,263,502 A 3,332,286 A 3,410,349 A 3,588,192 A …
3,089,507 A 3,094,396 A 3,232,437 A 3,263,502 A 3,332,286 A 3,410,349 A 3,588,192 A …
Substrate processing apparatus for processing substrates
J Fluit - US Patent 12,040,199, 2024 - Google Patents
The disclosure relates to substrate processing apparatus, with a first and second reactor,
each reactor configured with an elevator to transfer a boat with substrates to the reactor. The …
each reactor configured with an elevator to transfer a boat with substrates to the reactor. The …
Method of forming a structure on a substrate
TJV Blanquart, SP Haukka - US Patent 10,867,788, 2020 - Google Patents
The invention relates to depositing a layer on a substrate in a reactor, by: introducing a first
precursor comprising a silicon halide in the reactor; introducing a second precursor in the …
precursor comprising a silicon halide in the reactor; introducing a second precursor in the …
Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
P Raisanen, ME Givens - US Patent 10,720,331, 2020 - Google Patents
Methods for forming a transition metal nitride film on a substrate by atomic layer deposition
and related semiconductor device structures are provided. In some embodiments, methods …
and related semiconductor device structures are provided. In some embodiments, methods …
Deposition of metal borides
C Zhu, K Shrestha, S Haukka - US Patent 10,851,456, 2020 - Google Patents
A method for depositing a metal film onto a substrate is disclosed. In particular, the method
comprises pulsing a metal halide precursor onto the substrate and pulsing a decaborane …
comprises pulsing a metal halide precursor onto the substrate and pulsing a decaborane …
Methods for forming a semiconductor structure and related semiconductor structures
D Kohen, HB Profijt, A Kretzschmar - US Patent 10,923,344, 2021 - Google Patents
A method for forming a forming a semiconductor structure is disclosed. The method may
include: forming a silicon oxide layer on a surface of a substrate, depositing a silicon …
include: forming a silicon oxide layer on a surface of a substrate, depositing a silicon …
Sequential infiltration synthesis apparatus
IJ Raaijmakers, JW Maes, W Knaepen… - US Patent …, 2023 - Google Patents
2017-02-28 Assigned to ASM IP HOLDING BV reassignment ASM IP HOLDING BV
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors …
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors …